• Photonics Research
  • Vol. 3, Issue 3, 63 (2015)
Shahar Levy1, Matvei Klebanov2, and Avi Zadok1、*
Author Affiliations
  • 1Faculty of Engineering, Bar-Ilan University, Ramat-Gan 5290002, Israel
  • 2Department of Physics, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel
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    DOI: 10.1364/PRJ.3.000063 Cite this Article Set citation alerts
    Shahar Levy, Matvei Klebanov, Avi Zadok. High-Q ring resonators directly written in As2S3 chalcogenide glass films[J]. Photonics Research, 2015, 3(3): 63 Copy Citation Text show less

    Abstract

    Planar ring resonator waveguides are fabricated in thin films of As2S3 chalcogenide glass, deposited on silica-on-silicon substrates. Waveguide cores are directly written by scanning the focused illumination of a femtosecond Ti:sapphire laser at a central wavelength of 810 nm, through a two-photon photo-darkening process. A large photo-induced index change of 0.3–0.4 refractive index units is obtained. The radius of the ring resonator is 1.9 mm, corresponding to a transmission free spectral range of 9.1 GHz. A high loaded (intrinsic) Q value of 110,000 (180,000) is achieved. The thermal dependence of the resonator transfer function is characterized. The results provide the first report, to the best of our knowledge, of directly written high-Q ring resonators in chalcogenide glass films, and demonstrate the potential of this simple technique towards the fabrication of planar lightguide circuits in these materials.
    Δ(FSR)(2FSR02/λ02)dChΔn.(1)

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    Qint=2Qloaded/(1+ER1)=180,000,(2)

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    α=(2πng)/(Qintλ0)=2.7dB/cm,(3)

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    dλr/dT=(αT+nT/ng)λr,(4)

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    Shahar Levy, Matvei Klebanov, Avi Zadok. High-Q ring resonators directly written in As2S3 chalcogenide glass films[J]. Photonics Research, 2015, 3(3): 63
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