Fig. 1. Structure characterization of the CNFs. (a) Image of the CNFs under the SEM. (b) Image of the CNFs under the TEM. (Reproduced with permission from Ref. [15].)

Fig. 2. Structure characterization of the CNSs. (a) Image of the CNSs under the SEM. (b) Image of the CNSs under the TEM. (Reproduced with permission from Ref. [18].)

Fig. 3. Theory model of the CNTs.

Fig. 4. Structure characterization of the CNTs. (Reproduced with permission from Ref. [29].)

Fig. 5. Raman spectra of pristine (thin solid), I₂-intercalated (thick solid), and deintercalated (dashed) SWNTs in the low Raman shift range taken by: (a) the 514.5-nm line of an Ar-ion laser and by (b) the 647.1-nm line of Kr-ion laser. (Reproduced with permission from Ref. [33].)

Fig. 6. (Color online) UV–vis spectroscopy of SWCNT-3 with 9 anthracene carboxylic acid in DI water. (Reproduced with permission from Ref. [34].)

Fig. 7. (Color online) Fabrication steps of the RG/PDMS composite flexible sensor. (Reproduced with permission from Ref. [35].)

Fig. 8. Schematic of the process of CVD method of preparing the GF/PDMS strain sensors. (Reproduced with permission from Ref. [36].)

Fig. 9. (Color online) (a) Respective cyclic voltammograms of TiO₂ nanotube supercapacitor, PEDOT–MWNT film supercapacitor and TiO₂ nanotube + PEDOT–MWNT film supercapacitor in 1 M H₂SO₄ aqueous electrolyte. (b) Nyquist plots of TiO₂ nanotube supercapacitor, PEDOT–MWNT film supercapacitor, and TiO₂ nanotube + PEDOT–MWNT film supercapacitor from high frequency to low frequency. (Reproduced with permission from Ref. [8].)

Fig. 10. (Color online) Temperature dependence of resistivity of several materials. (Reproduced with permission from Ref. [37].)

Fig. 11. (Color online) (a) The values of contact resistance. (b) Characteristics of drain current versus gate voltage of transistors with a P3HT or F-SWCNT-P3HT channel and gold or MWCNT S/Ds. (Reproduced with permission from Ref. [38].)

Fig. 12. (Color online) Resistance evolution of resulting structures as a function of gas concentrations. (a) CO. (b) CO₂. (c) NH₃. (Reproduced with permission from Ref. [39].)

Fig. 13. (Color online) Two-dimensional circuit model for ballistic CNTFET. (Reproduced with permission from Ref. [40].)

Fig. 14. (Color online) Drain-source current diagram versus dielectric constant. (Reproduced with permission from Ref. [40].)

Fig. 15. (Color online) Transport features. (a) Sulfur Dioxide. (b) Acetonitrile. (c) Sarin Gas. (d) Carbonyl Chloride at logarithmic scale for V_DS = 0.2, 0.4 V. (Reproduced with permission from Ref. [40].)

Fig. 16. (Color online) (a) and (c) Reflection losses of raw CNTs and Ni with 2−5 mm thickness. (b) and (d) Complex permittivity ε and permeability μ of the raw CNTs and Ni. (Reproduced with permission from Ref. [41].)

Table 1. Several equipment and specification in the hydrothermal auxiliary method.

Table 2. Several equipment and specification in the method of CVD.

Table 3. Comparison between hydrothermal auxiliary method and CVD method.