Sheng Yu, Tao Chu. Electrical nonlinearity in silicon modulators based on reversed PN junctions[J]. Photonics Research, 2017, 5(2): 124
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Fig. 2. (a) Cross-section of a silicon phase shifter based on a vertical PN junction. (b–d) Calculated nonlinear relationships of the optical phase change, absorption coefficient change, and depletion capacitance versus the different reverse bias voltages and the fitting results.
Fig. 5. (a) Structure of the simulated MZM, (b) CDR3 under different phase biases for the nonlinear model with EN and the conventional nonlinear model without EN, and (c) SFDR results for the nonlinear model with EN and the conventional nonlinear model without EN.