Electrical nonlinearity in silicon modulators based on reversed PN junctions

Sheng Yu; Tao Chu

doi:10.1364/PRJ.5.000124

Journals >Photonics Research >Volume 5 >Issue 2 >Page 124 > Article

Photonics Research
Vol. 5, Issue 2, 124 (2017)

Electrical nonlinearity in silicon modulators based on reversed PN junctions

Sheng Yu¹ and Tao Chu^1、2、*

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Information Science and Electronic Engineering, Zhejiang University, #38, Zheda Road, Hangzhou 310027, China

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DOI: 10.1364/PRJ.5.000124 Cite this Article Set citation alerts

Sheng Yu, Tao Chu. Electrical nonlinearity in silicon modulators based on reversed PN junctions[J]. Photonics Research, 2017, 5(2): 124 Copy Citation Text

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Sheng Yu, Tao Chu. Electrical nonlinearity in silicon modulators based on reversed PN junctions[J]. Photonics Research, 2017, 5(2): 124

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