Microfluidic-method-processed p-type NiOx Thin-film Transistors

Yu LIANG; Ling-Yan LIANG; Wei-Hua WU; Yu PEI; Zhi-Qiang YAO; Hong-Tao CAO; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

doi:10.15541/jim20180167

Journals >Journal of Inorganic Materials >Volume 34 >Issue 1 >Page 79 > Article

Journal of Inorganic Materials
Vol. 34, Issue 1, 79 (2019)

Microfluidic-method-processed p-type NiO_x Thin-film Transistors

Yu LIANG^1、2, Ling-Yan LIANG¹, Wei-Hua WU¹, Yu PEI¹, Zhi-Qiang YAO², Hong-Tao CAO¹, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]¹

Author Affiliations

¹1. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²2. State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials (ICDLCEM), School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China

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DOI: 10.15541/jim20180167 Cite this Article

Yu LIANG, Ling-Yan LIANG, Wei-Hua WU, Yu PEI, Zhi-Qiang YAO, Hong-Tao CAO, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microfluidic-method-processed p-type NiO_x Thin-film Transistors[J]. Journal of Inorganic Materials, 2019, 34(1): 79 Copy Citation Text

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. Illustration of the preparation process of PDMS moulds

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. Illustration of the patterning process by capillary method

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. Thermogravimetric and differential thermal analysis (TG-DTA) curves of NiO precursor

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. XRD patterns of NiO powders

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. (a) Optical microscope image of a substrate patterned with NiO stripes with inset showing a close-up view; (b) Height fluctuation across the NiO stripe margin obtained by atomic force microscopy

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. Schematic structure of the fabricated TFT device (a), output curves of the TFTs annealed at 300℃ (b) and 350℃ (c), and transfer curves of the corresponding TFTs (d)

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