• Journal of Inorganic Materials
  • Vol. 34, Issue 1, 79 (2019)
Yu LIANG1、2, Ling-Yan LIANG1, Wei-Hua WU1, Yu PEI1, Zhi-Qiang YAO2, Hong-Tao CAO1, [in Chinese]1、2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]1
Author Affiliations
  • 11. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 22. State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials (ICDLCEM), School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
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    DOI: 10.15541/jim20180167 Cite this Article
    Yu LIANG, Ling-Yan LIANG, Wei-Hua WU, Yu PEI, Zhi-Qiang YAO, Hong-Tao CAO, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microfluidic-method-processed p-type NiOx Thin-film Transistors[J]. Journal of Inorganic Materials, 2019, 34(1): 79 Copy Citation Text show less

    Abstract

    It’s essential to develop patterning deposition methods to simplify the process of device fabrication and then reduce the production cost. In this work, a new patterning deposition method, i.e. microfluidic method, was demonstrated in details. In this technology, a micro-fluidic channel with a width of 80 μm and a height of 2 μm can be constructed between PDMS modules and substrates, and under capillary force precursor drops will move through the channel to form a patterned liquid film which is then fixed on the substrate via thermal treatments, and finally patterned films are prepared. In addition, the thermal-driven solidification process from NiOx precursor powder to oxide was investigated through thermogravimetric/differential thermal analysis (TG-DTA) measurement. And the evolution of phase structure of the NiOx precursor powder was analyzed with respect to post-annealing temperatures. Finally, thin-film transistors were fabricated applying the patterned NiOx thin films as channels, and the optimized device showed typical p-type transistor features, with a field-effect mobility up to 0.8 cm2·V-1·s-1.
    Yu LIANG, Ling-Yan LIANG, Wei-Hua WU, Yu PEI, Zhi-Qiang YAO, Hong-Tao CAO, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microfluidic-method-processed p-type NiOx Thin-film Transistors[J]. Journal of Inorganic Materials, 2019, 34(1): 79
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