Researching | Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer

Journals >Journal of Semiconductors >Volume 43 >Issue 7 >Page 072801 > Article

Journal of Semiconductors
Vol. 43, Issue 7, 072801 (2022)

Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer

Yunqi Li¹, Xinwei Wang², Ning Zhang^2、*, Xuecheng Wei², and Junxi Wang²

Author Affiliations

¹Institute of First Medical Center, Chinese PLA General Hospital, Beijing 100853, China

²State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.1088/1674-4926/43/7/072801 Cite this Article

Yunqi Li, Xinwei Wang, Ning Zhang, Xuecheng Wei, Junxi Wang. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer[J]. Journal of Semiconductors, 2022, 43(7): 072801 Copy Citation Text

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References

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Yunqi Li, Xinwei Wang, Ning Zhang, Xuecheng Wei, Junxi Wang. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer[J]. Journal of Semiconductors, 2022, 43(7): 072801

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