[1] Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. Journal of Applied Physics, 2009,105(9):4-348.
[2] Lu W, He L, Chen X S, et al. The development of HgCdTe infrared detector technology in China[C]// Infrared Technology and Applications XXXV. International Society for Optics and Photonics, 2009:72982Z-72982Z-13.
[3] He K, Zhou S M, Li Y, et al. Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes[J]. Journal of Applied Physics, 2015, 117(20):091101-297.
[4] Zhang P, Ye Z H, Sun C H, et al. Passivation effect of atomic layer deposition of Al2O3, film on HgCdTe infrared detectors[J]. Journal of Electronic Materials, 2016, 45(9):4716-4720.
[5] Li Y, Hu W, Ye Z, et al. Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.[J]. Optics Letters, 2017, 42(7):1325-1328.
[6] Hu W, Ye Z, Liao L, et al. 128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk[J]. Optics Letters, 2014, 39(17):5184-7.
[7] Chu M, Terterian S. Au-doped HgCdTe for infrared detectors and focal plane arrays[J]. Proceedings of SPIE-The International Society for Optical Engineering, 2001:4454.
[8] Sun Q, Yang J, Wei Y, et al. Characteristics of Au Migration and Concentration Distributions in Au-Doped HgCdTe LPE Materials[J]. Journal of Electronic Materials, 2015, 44(8):2773-2778.
[9] Destéfanis G L. Electrical doping of HgCdTe by ion implantation and heat treatment[J]. Journal of Crystal Growth, 1988, 86(1-4):700-722.
[11] Tang M F S, Stevenson D A. Interdiffusion behavior of HgTe-CdTe junctions[J]. Applied Physics Letters, 1987, 50(18):1272-1274.