In this report, series of annealing experiments under different temperatures of Au-doped HgCdTe covered by CdTe have been implemented. The annealing process can improve the crystal state of electron beam evaporated CdTe layer. The interface between CdTe and HgCdTe can also be modified. The Au doping distribution in HgCdTe did not change after the vacuum annealing at 240℃ and 300℃. However, the Au element diffused into the CdTe cap layer significantly, leading to a higher concentration of (5~6)×1016 cm-3. On the other hand, the concentration of mercury vacancy after various annealing processes was different due to the temperature-dependent diffusion mechanism. In general, the carrier concentration measured by HALL effect varied from 2×1016 cm-3 to 5.5×1016 cm-3, when the annealing temperature was increased from 240℃ to 300℃.