• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 1, 2021356 (2022)
Xu-Liang CHAI1、2, Yi ZHOU1、2、*, Fang-Fang WANG2, Zhi-Cheng XU2, Zhao-Ming LIANG2, Yi-Hong ZHU2, Jian ZHOU2, Lu-Lu ZHENG2, Min HUANG2, Zhi-Zhong BAI2, Ai-Bo HUANG2, Hong-Lei CHEN2, Rui-Jun DING2, and Jian-Xin CHEN1、2、*
Author Affiliations
  • 1School of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    DOI: 10.11972/j.issn.1001-9014.2022.01.008 Cite this Article
    Xu-Liang CHAI, Yi ZHOU, Fang-Fang WANG, Zhi-Cheng XU, Zhao-Ming LIANG, Yi-Hong ZHU, Jian ZHOU, Lu-Lu ZHENG, Min HUANG, Zhi-Zhong BAI, Ai-Bo HUANG, Hong-Lei CHEN, Rui-Jun DING, Jian-Xin CHEN. Interband cascaded infrared optoelectronic devices for high operating temperature applications[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021356 Copy Citation Text show less
    The energy band alignments for the ICIP,the arrow shows the transport direction of the electron,and the green lines shows the energy level for the electron or holes in the superlattices and quantum wells
    Fig. 1. The energy band alignments for the ICIP,the arrow shows the transport direction of the electron,and the green lines shows the energy level for the electron or holes in the superlattices and quantum wells
    (a)The relationship between the detectivity and absorber thickness for single-absorber detector,(b)the maximum detectivity of current-matched structure for different number of stage and diffusion length
    Fig. 2. (a)The relationship between the detectivity and absorber thickness for single-absorber detector,(b)the maximum detectivity of current-matched structure for different number of stage and diffusion length
    Responsivity spectrum for the(a)one-stage ICIP and(b)two-stage ICIP at different temperatures[23]
    Fig. 3. Responsivity spectrum for the(a)one-stage ICIP and(b)two-stage ICIP at different temperatures23
    (a)The relationship between the responsivity for the three-stage,five-stage and ten-stage ICIPs at the bias of -200 mV and the wavelength of 4.1 μm,(b)detectivity of ten-stage ICIP with immersion lens at the operating temperature of 300 K
    Fig. 4. (a)The relationship between the responsivity for the three-stage,five-stage and ten-stage ICIPs at the bias of -200 mV and the wavelength of 4.1 μm,(b)detectivity of ten-stage ICIP with immersion lens at the operating temperature of 300 K
    Infrared images of mid-wavelength ICIP FPA working at(a)125 K,(b)135 K,(c)145 K
    Fig. 5. Infrared images of mid-wavelength ICIP FPA working at(a)125 K,(b)135 K,(c)145 K
    (a)Room temperature frequency response of the five-stage ICIP versus bias with 20 µm device diameter,(b)frequency response versus device diameter under the bias of -5 V [25]
    Fig. 6. (a)Room temperature frequency response of the five-stage ICIP versus bias with 20 µm device diameter,(b)frequency response versus device diameter under the bias of -5 V 25
    (a)Detectivity of ten-stage ICIP at the operating temperature of 220 K,(b)the response time under the bias of -1.3 V,the inset shows the ten-stage ICIP with TEC package
    Fig. 7. (a)Detectivity of ten-stage ICIP at the operating temperature of 220 K,(b)the response time under the bias of -1.3 V,the inset shows the ten-stage ICIP with TEC package
    The schematic illustration of the ICLED
    Fig. 8. The schematic illustration of the ICLED
    (a)Electroluminescence spectra for the two-stage ICLED,(b)electroluminescence spectra for the five-stage ICLED,(c)output power for the five-stage ICLED,(d)wall plug efficiency for the five-stage ICLED with a mesa size of 400×400 μm2[26]
    Fig. 9. (a)Electroluminescence spectra for the two-stage ICLED,(b)electroluminescence spectra for the five-stage ICLED,(c)output power for the five-stage ICLED,(d)wall plug efficiency for the five-stage ICLED with a mesa size of 400×400 μm2[26
    工作温度(K)峰值响应率(cm·Hz1/2/W)响应非均匀性NETD(mK)盲元率
    1152.17×10118.7%15.20.24%
    1252.06×10118.8%27.00.27%
    1352.17×10118.8%34.30.29%
    Table 1. Performance of the ICIP focal plane array at different operating temperatures
    Xu-Liang CHAI, Yi ZHOU, Fang-Fang WANG, Zhi-Cheng XU, Zhao-Ming LIANG, Yi-Hong ZHU, Jian ZHOU, Lu-Lu ZHENG, Min HUANG, Zhi-Zhong BAI, Ai-Bo HUANG, Hong-Lei CHEN, Rui-Jun DING, Jian-Xin CHEN. Interband cascaded infrared optoelectronic devices for high operating temperature applications[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021356
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