Xiao-Le MA, Jie GUO, Rui-Ting HAO, Guo-Shuai WEI, Guo-Wei WANG, Ying-Qiang XU, Zhi-Chuan NIU. Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice /GaSb bulk materials[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 569
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 5, 569 (2021)
Fig. 1. Structure diagram of mid-/short-wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk material
Fig. 2. Schematic diagram of process flow
Fig. 3. Schematic diagram of device vertical profile（a）Anodic sulfuration+passivation，（b）direct SiO2 passivation
Fig. 4. High-resolution X-ray diffraction（HRXRD）image of the device
Fig. 5. Optical microscope image of the sample surface (a) AFM image of the surface (b) and SEM image of the section(c)
Fig. 6. Curve of dark current density J and R∙A at different temperatures vs bias for sulfurized +SiO2 passivated devices（a）and（c）and SiO2 passivated devices（b）and（d）
Fig. 7. Curves of the dark current density（a）and R∙A value（b）of the device varying with temperature under bias voltage of -100 mV
Fig. 8. The data of R0A changing with P/A value of devices with different mesa area at 77 K and its fitting curve
Fig. 9. Normalized spectral response curve of the device（a）short wave channel，（b）middle wave channel
Fig. 10. Blackbody spectral responsivity curve of the device
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