Researching | Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

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Acta Physica Sinica
Vol. 69, Issue 9, 098501-1 (2020)

Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Fu Chen^1、2, Wen-Xin Tang^1、2, Guo-Hao Yu^2、*, Li Zhang², Kun Xu², and Bao-Shun Zhang^2、*

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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DOI: 10.7498/aps.69.20191850 Cite this Article

Fu Chen, Wen-Xin Tang, Guo-Hao Yu, Li Zhang, Kun Xu, Bao-Shun Zhang. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(9): 098501-1 Copy Citation Text

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References

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Fu Chen, Wen-Xin Tang, Guo-Hao Yu, Li Zhang, Kun Xu, Bao-Shun Zhang. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(9): 098501-1

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