• Infrared and Laser Engineering
  • Vol. 51, Issue 3, 20210226 (2022)
Pingping Yao1、2, Bihai Tu1、2, Zhengyu Zou1、2, Zhilong Xu1、2, Aiwen Zhang1、2, Liang Sun1、2、*, Donggen Luo1、2, and Jin Hong1、2
Author Affiliations
  • 1Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
  • 2Key Laboratory of Optical Calibration and Characterization, Chinese Academy of Sciences, Hefei 230031, China
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    DOI: 10.3788/IRLA20210226 Cite this Article
    Pingping Yao, Bihai Tu, Zhengyu Zou, Zhilong Xu, Aiwen Zhang, Liang Sun, Donggen Luo, Jin Hong. Single event latch-up and damage mechanism of analog front-end for satellite-borne polarization camera[J]. Infrared and Laser Engineering, 2022, 51(3): 20210226 Copy Citation Text show less
    Structure diagram of DPC instrument
    Fig. 1. Structure diagram of DPC instrument
    Structure of CCD image acquisition system
    Fig. 2. Structure of CCD image acquisition system
    single-particle online detection system. (a) Principle block diagram; (b) Photo of AFE in radiation field
    Fig. 3. single-particle online detection system. (a) Principle block diagram; (b) Photo of AFE in radiation field
    Pulsed laser single event test. (a) Experimental site; (b) The processing flow
    Fig. 4. Pulsed laser single event test. (a) Experimental site; (b) The processing flow
    Structure diagram of power supply for AFE
    Fig. 5. Structure diagram of power supply for AFE
    Schematic diagram of heat simulation after SEL
    Fig. 6. Schematic diagram of heat simulation after SEL
    Ion specieIncident angleLET/MeV·cm2·mg−1Energy/MeVmedium range/μmFlux/ion·cm−2·s−1Experimental environment
    GeVertical37.320830.310900Vacuum tank
    ClVertical13.415042.813500Vacuum tank
    FVertical4.410072.725400Vacuum tank
    Table 1. Ion parameters of heavy ion irradiation test
    Ion specie LET/ MeV·cm2·mg−1Flux/ Ion·cm−2·s−1Working current of the device/mA Limiting current of power supply/mA Dynamic output signal Qualified or not Conclusion
    Initial0049500Around 4B0HYesThe chip is normal
    Ge37.310900371500Around FFFFHNoSEL occurred
    After Ge0049500Around 4B0HYesThe chip is not damaged
    Cl13.413500297500Around FFFFHNoSEL occurred
    After Cl0049500Around 4B0HYesThe chip is not damaged
    F4.42540049500Around 4B0HYesThe chip is normal
    After F0049500Around 4B0HYesThe chip is normal
    Table 2. AFE test data of heavy ion irradiation
    LET by Laser simulation/ MeV·cm2·mg−1Number of tests Digital power current/mA Analog power current/mA Internal register communication Image output/DN Conclusion
    0Before test137Normal823Normal
    75First11496Abnormal16383SEL occurred
    Maintain SEL 95 minLaser stop1496Abnormal16383SEL occurred
    Power off and restartAfter test137Normal826Back to normal
    37Second11510Abnormal16383SEL occurred
    Power off and restartAfter test137Normal826Back to normal
    Table 3. Test data of pulsed laser irradiation
    ItemValue
    Increased power consumption of AFE after SEL/W1.136
    Increased power consumption of LDO after SEL/W3.234
    Increased power consumption of FPGA after SEL/W0.5
    Increased power consumption of DC12V after SEL/W0.158
    Increased power consumption of DC5V after SEL/W0.301
    Increased power consumption of circuit box after SEL/W5.329
    Increased current of primary power supply after SEL/A0.175
    Total current of primary power supply after SEL/A0.529
    Table 4. Increased power consumption of optical detector after SEL of the AFE
    DeviceHeat consumption after SEL/W Junction-to- case thermal resistance, θJC/℃·W-1Simulation case temperature/℃ Max junction temperature/℃ Level derating requirement/℃ Accordance
    AFE1.382254.284.6≤85Yes
    LDO3.57243.250.4≤85Yes
    FPGA0.86.349.654.6≤85Yes
    Table 5. Calculation results of working temperature after SEL
    Pingping Yao, Bihai Tu, Zhengyu Zou, Zhilong Xu, Aiwen Zhang, Liang Sun, Donggen Luo, Jin Hong. Single event latch-up and damage mechanism of analog front-end for satellite-borne polarization camera[J]. Infrared and Laser Engineering, 2022, 51(3): 20210226
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