Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Xiongliang Wei; Syed Ahmed Al Muyeed; Haotian Xue; Elia Palmese; Renbo Song; Nelson Tansu; Jonathan J. Wierer

doi:10.1364/PRJ.441122

Journals >Photonics Research >Volume 10 >Issue 1 >Page 33 > Article

Photonics Research
Vol. 10, Issue 1, 33 (2022)

Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

Xiongliang Wei^1、*, Syed Ahmed Al Muyeed¹, Haotian Xue¹, Elia Palmese¹, Renbo Song¹, Nelson Tansu^2、3、4, and Jonathan J. Wierer^1、5

Author Affiliations

¹Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA

²School of Electrical and Electronic Engineering, The University of Adelaide, Adelaide, SA 5005, Australia

³Institute for Photonics and Advanced Sensing, The University of Adelaide, Adelaide, SA 5005, Australia

⁴e-mail: nelson.tansu@adelaide.edu.au

⁵e-mail: jjwierer@ncsu.edu

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DOI: 10.1364/PRJ.441122 Cite this Article Set citation alerts

Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Elia Palmese, Renbo Song, Nelson Tansu, Jonathan J. Wierer. Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates[J]. Photonics Research, 2022, 10(1): 33 Copy Citation Text

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