Graphene Plasmonic Waveguide Based on Silicon-on-Insulator Structure

Teng Da; Zhao Yongzhe; Wang Yuncheng; Li Yiqiang; Wang Kai

doi:10.3788/LOP202158.0323001

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 3 >Page 3230011 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 3, 3230011 (2021)

Graphene Plasmonic Waveguide Based on Silicon-on-Insulator Structure

Teng Da¹, Zhao Yongzhe¹, Wang Yuncheng¹, Li Yiqiang¹, and Wang Kai²

Author Affiliations

¹College of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou , Henan 450044, China

²Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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DOI: 10.3788/LOP202158.0323001 Cite this Article Set citation alerts

Teng Da, Zhao Yongzhe, Wang Yuncheng, Li Yiqiang, Wang Kai. Graphene Plasmonic Waveguide Based on Silicon-on-Insulator Structure[J]. Laser & Optoelectronics Progress, 2021, 58(3): 3230011 Copy Citation Text

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Teng Da, Zhao Yongzhe, Wang Yuncheng, Li Yiqiang, Wang Kai. Graphene Plasmonic Waveguide Based on Silicon-on-Insulator Structure[J]. Laser & Optoelectronics Progress, 2021, 58(3): 3230011

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