Hideki Hirayama. Research status and prospects of deep ultraviolet devices[J]. Journal of Semiconductors, 2019, 40(12): 120301
- Journal of Semiconductors
- Vol. 40, Issue 12, 120301 (2019)
Fig. 1. (Color online) Schematic illustration of the DUV-LEDs structure.
![(Color online) I–V and edge emission I–L characteristics of the measured UV-C LD. The inset figure shows the edge emission spectrum at 0.5 A forward current[7].](/richHtml/jos/2019/40/12/120301/img_2.jpg)
Fig. 2. (Color online) I –V and edge emission I –L characteristics of the measured UV-C LD. The inset figure shows the edge emission spectrum at 0.5 A forward current[7 ].
Fig. 3. (Color online) IQE as a function of DD in an underlying layer under weak excitation with excess carrier density of 1 × 1018 cm−3.
Fig. 4. (Color online) Hall-effect temperature-dependent (a) hole concentration, (b) hole mobilities, and (c) hole concentration and mobility measured down to T = 4 K.
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