Tian XIE, Xin-Hui YE, Hui XIA, Ju-Zhu LI, Shuai-Jun ZHANG, Xin-Yang JIANG, Wei-Jie DENG, Wen-Jing WANG, Yu-Ying LI, Wei-Wei LIU, Xiang LI, Tian-Xin LI. Research progress of room temperature semiconductor infrared photodetectors [J]. Journal of Infrared and Millimeter Waves, 2020, 39(5): 583
- Journal of Infrared and Millimeter Waves
- Vol. 39, Issue 5, 583 (2020)
![The dark current of MBE grown HgCdTe detector material is shown for an 18-μm pixel. Typical InSb dark current is also shown as a comparison[7]](/richHtml/hwyhmb/2020/39/5/583/img_1.png)
Fig. 1. The dark current of MBE grown HgCdTe detector material is shown for an 18-μm pixel. Typical InSb dark current is also shown as a comparison[7]
![The temperature dependence of the four dark current sources and their combination [13]](/richHtml/hwyhmb/2020/39/5/583/img_2.png)
Fig. 2. The temperature dependence of the four dark current sources and their combination [13]
![Temperature dependence of the dark current of InGaAs extended wavelength photodetector[23]](/Images/icon/loading.gif){kind=icon}
Fig. 3. Temperature dependence of the dark current of InGaAs extended wavelength photodetector[23]
Fig. 4. Extended wavelength InGaAs detectors: Arrhenius plot of the dark current VS temperature for the 10×10 test array at a reverse bias of -100 mV[20]
Fig. 5. Modeled dark current components for SWIR HgCdTe/Si diode at 295 K[26]
Fig. 6. Average pixel dark current (with cold shield) vs temperature for 2.5 μm cutoff HgCdTe/CdZnTe photodetector, comparison with Rule-07[30]
Fig. 7. Dark current characteristics of MWIR InAs/InAsSb nBn detector: (a) Measured dark current density VS applied bias in the temperature range T=120~300 K as indicated. (b) The Arrhenius plot of dark current density VS inverse photodiode temperature measured at applied bias V=-0.1 V [41]
Fig. 8. Measured and modeled current density versus inverse temperature of HgCdTe/CdTe/GaAs [40]
Fig. 9. Schematic illustration of the InAs/GaSb T2SL interband cascade infrared photodetectors: (a) photocarrier dynamics, and (b) dark current dynamics in ICIPs[41]
Fig. 10. p+/v/n+ HgCdTe LWIR PV detector: (a) Experimental values for Jmax versus temperature (b) Experimental values for Jmin versus temperature[52]
Fig. 11. Arrhenius plot of R0A for InAs/GaSb T2SL ICIP devices from wafers in set #3 [53]
Fig. 12. GaAs/AlGaAs QCD: Detectivities of N1020, N1021, and N1022 as function of temperature. The dashed lines on top represent the background limited detectivity for a hemispherical FOV and a background temperature of 300 K[57]
Fig. 13. Saturation current density for IS(intersubband) and IB(interband) quantum cascade devices at room temperature[62]
Fig. 14. Recent progress of the SITP(CAS) in near-and mid-wavelength infrared: (a) Dark current development of Near-IR InGaAs FPAs[17] (b) Measured R0A and D* for the one- (ICIP-1) and two-stage (ICIP-2) interband cascade photo detectors at a wide range of temperature. Also shown the Ea and dark current mechanisms[47]
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Table 1. InGaAs近红外探测器室温性能最新报道
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Table 2. InGaAs延伸波长探测器室温性能最新报道
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Table 3. HgCdTe短波红外探测器室温性能的最新报道
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Table 4. 中波红外探测器近室温性能的最新报道
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Table 5. 长波红外探测器近室温性能最新报道
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