Room temperature operation of infrared photon detectors will open up a wider range of applications. This article summarizes the room temperature performance and dark current mechanism of semiconductor devices from near infrared to long wavelength infrared. Different methods to suppress dark current including the design of the interband cascade structure of InAs/GaSb type Ⅱ superlattices and the nonequilibrium operation mode of HgCdTe to suppress the Auger process show unique advantages. These electronic structural designs， combined with the latest progress in subwavelength photonic structures to enhance light coupling and reduce dark current， hold the promise to achieve a high performance infrared imaging chip operating in room temperature in the near future.