• Journal of Semiconductors
  • Vol. 45, Issue 1, 012501 (2024)
Yansheng Hu1,†, Yuangang Wang1,†, Wei Wang, Yuanjie Lv*..., Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu and Zhihong Feng**|Show fewer author(s)
Author Affiliations
  • National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
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    DOI: 10.1088/1674-4926/45/1/012501 Cite this Article
    Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501 Copy Citation Text show less
    (Color online) (a) Schematic cross-section of the AlGaN/GaN HEMT on a GaN substrate and (b) the SEM image of the Γ-shaped gate.
    Fig. 1. (Color online) (a) Schematic cross-section of the AlGaN/GaN HEMT on a GaN substrate and (b) the SEM image of the Γ-shaped gate.
    (Color online) (a) Static and pulsed current−voltage curves. (b) Double transfer characteristics of the AlGaN/GaN HEMTs on a GaN substrate.
    Fig. 2. (Color online) (a) Static and pulsed current−voltage curves. (b) Double transfer characteristics of the AlGaN/GaN HEMTs on a GaN substrate.
    (Color online) 3-terminal breakdown characteristic of the AlGaN/GaN HEMT on a freestanding GaN substrate.
    Fig. 3. (Color online) 3-terminal breakdown characteristic of the AlGaN/GaN HEMT on a freestanding GaN substrate.
    (Color online) Small-signal radio frequency performance of the AlGaN/GaN HEMT on a GaN substrate.
    Fig. 4. (Color online) Small-signal radio frequency performance of the AlGaN/GaN HEMT on a GaN substrate.
    (Color online) Large-signal performance of the AlGaN/GaN HEMTs on a GaN substrate. (a) The CW output power and PAE vs. Vds. (b) The large-signal performance and PAE vs. Pin.
    Fig. 5. (Color online) Large-signal performance of the AlGaN/GaN HEMTs on a GaN substrate. (a) The CW output power and PAE vs. Vds. (b) The large-signal performance and PAE vs. Pin.
    (Color online) Plot of Pout vs. frequency for our devices against reported AlGaN/GaN HEMT on a GaN substrate from reported results[17−22].
    Fig. 6. (Color online) Plot of Pout vs. frequency for our devices against reported AlGaN/GaN HEMT on a GaN substrate from reported results[1722].
    Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501
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