Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501

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- Journal of Semiconductors
- Vol. 45, Issue 1, 012501 (2024)

Fig. 1. (Color online) (a) Schematic cross-section of the AlGaN/GaN HEMT on a GaN substrate and (b) the SEM image of the Γ-shaped gate.

Fig. 2. (Color online) (a) Static and pulsed current−voltage curves. (b) Double transfer characteristics of the AlGaN/GaN HEMTs on a GaN substrate.

Fig. 3. (Color online) 3-terminal breakdown characteristic of the AlGaN/GaN HEMT on a freestanding GaN substrate.

Fig. 4. (Color online) Small-signal radio frequency performance of the AlGaN/GaN HEMT on a GaN substrate.

Fig. 5. (Color online) Large-signal performance of the AlGaN/GaN HEMTs on a GaN substrate. (a) The CW output power and PAE vs. Vds. (b) The large-signal performance and PAE vs. Pin.
![(Color online) Plot of Pout vs. frequency for our devices against reported AlGaN/GaN HEMT on a GaN substrate from reported results[17−22].](/Images/icon/loading.gif)

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