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Journal of Semiconductors
Vol. 45, Issue 1, 012501 (2024)

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Yansheng Hu^1,†, Yuangang Wang^1,†, Wei Wang, Yuanjie Lv^*..., Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu and Zhihong Feng^**|Show fewer author(s)

Author Affiliations

National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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DOI: 10.1088/1674-4926/45/1/012501 Cite this Article

Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501 Copy Citation Text

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References

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Yansheng Hu, Yuangang Wang, Wei Wang, Yuanjie Lv, Hongyu Guo, Zhirong Zhang, Hao Yu, Xubo Song, Xingye zhou, Tingting Han, Shaobo Dun, Hongyu Liu, Aimin Bu, Zhihong Feng. 11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate[J]. Journal of Semiconductors, 2024, 45(1): 012501

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