Waveguide external cavity narrow linewidth semiconductor lasers

Chanchan Luo; Ruiying Zhang; Bocang Qiu; Wei Wang

doi:10.1088/1674-4926/42/4/041308

Journals >Journal of Semiconductors >Volume 42 >Issue 4 >Page 041308 > Article

Journal of Semiconductors
Vol. 42, Issue 4, 041308 (2021)

Waveguide external cavity narrow linewidth semiconductor lasers

Chanchan Luo^1、2、5, Ruiying Zhang^1、2、5, Bocang Qiu³, and Wei Wang⁴

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi’an 710021, China

⁴The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵Division of Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China

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DOI: 10.1088/1674-4926/42/4/041308 Cite this Article

Chanchan Luo, Ruiying Zhang, Bocang Qiu, Wei Wang. Waveguide external cavity narrow linewidth semiconductor lasers[J]. Journal of Semiconductors, 2021, 42(4): 041308 Copy Citation Text

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Fig. 1. (Color online) External cavity feedback semiconductor laser. (a) Block diagram. (b) Equivalent model.

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Fig. 2. (Color online) (a) Illustration of the role of factor A. (b) Illustration of factor B (optical negative feedback).

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Fig. 3. (Color online) The relationship between the external cavity length, the waveguide loss and the intrinsic linewidth of the laser ^[36].

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Fig. 4. (Color online) Optical path extension under different coupling coefficients and different losses.

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Fig. 5. (Color online) (a) SSC structure diagram^[42]. (b) Heterogeneous integration^[41].

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Fig. 6. (Color online) The intrinsic linewidth of hybrid integrated laser based on butt coupling technology: a-^[43], b-^[44], c-^[45], d-^[46], e-^[47], f-^[48], g-^[49], h-^[50], i-^[51], j-^[52], k-^[53], l-^[54], m-^[55], n-^[56], o-^[57], p-^[58], q-^[59], r-^[60], s-^[61], t-^[62], u-^[63], v-^[64].

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Fig. 7. (Color online) Schematic view of the hybrid laser based on a Si₃N₄ feedback circuit comprising a spiral and three MRRs^[64].

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Fig. 8. (a) Laser structure diagram based on triple MRR. (b) Frequency noise spectrum^[76].

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Platform	Propagation loss (dB/cm)	Group index	Refractive index contrast
SiON/SiO₂^[27]	0.05	1.4816	0.025
SiO₂/Si^[28]	0.023	1.465	0.02
Si-wire/SiO₂^[29]	2.4	3.47	–
Si₃N₄/SiO₂^[30]	0.013	1.996	0.5
Ultralow-loss SOI^[31]	0.16	3.61	2.145

Table 1. Optical properties of the waveguide external cavity platforms.

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First author	Structure	SMSR (dB)	Tuning range (nm)	Min. linewidth (kHz)
Hulme^[70]	MRR	35	40	338
Komljenovic^[71]	MRR + LR	45	54	50
Komljenovic^[72]	MRR	>40	29	260
Liang^[73]	MRR + LR	>40	40	150
Tran^[74]	MRR + LR + MZI	>50	55	50
Huang^[75]	Grating	>55	–	1
Huang^[75]	MRR + Grating	>55	–	0.5
Tran^[76]	Dual MRR + LR	>45	40	2
Tran^[76]	Triple MRR + LR	>40	110	<0.22

Table 2. The performances of heterogeneous integrated lasers.

Chanchan Luo, Ruiying Zhang, Bocang Qiu, Wei Wang. Waveguide external cavity narrow linewidth semiconductor lasers[J]. Journal of Semiconductors, 2021, 42(4): 041308

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