[1] C Liu, X Yan, X Song et al. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications. Nat Nanotechnol, 13, 404(2018).
[2] K S Novoselov, A K Geim, S V Morozov et al. Electric field effect in atomically thin carbon films. Science, 306, 666(2004).
[3] C Qiu, F Liu, L Xu et al. Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches. Science, 361, 387(2018).
[4] F Liu, C Qiu, Z Zhang et al. Dirac electrons at the source: breaking the 60-mV/decade switching limit. IEEE Trans Electron Devices, 65, 2736(2018).
[5] F Liu, C Qiu, Z Zhang et al. First principles simulation of energy efficient switching by source density of states engineering. IEEE International Electron Devices Meeting (IEDM), 33(2018).
[6] J Lyu, J Pei, Y Guo et al. A new opportunity for 2D van der Waals heterostructures: making steep-slope transistors. Adv Mater, 32, 1906000(2020).
[7] W J Yu, S H Chae, S Y Lee et al. Ultra-transparent, flexible single-walled carbon nanotube non-volatile memory device with an oxygen-decorated graphene electrode. Adv Mater, 23, 1889(2011).
[8] S Lee, E B Song, S Kim et al. Impact of gate work-function on memory characteristics in Al2O3/HfO
[9] S M Kim, E B Song, S Lee et al. Transparent and flexible graphene charge-trap memory. ACS Nano, 6, 7879(2012).
[10] S Bertolazzi, D Krasnozhon, A Kis. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano, 7, 3246(2013).
[11] M S Choi, G H Lee, Y J Yu et al. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat Commun, 4, 1624(2013).
[12] E Zhang, W Wang, C Zhang et al. Tunable charge-trap memory based on few-layer MoS2. ACS Nano, 9, 612(2015).
[13] Q A Vu, Y S Shin, Y R Kim et al. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio. Nat Commun, 7, 12725(2016).
[14] G He, H Ramamoorthy, C P Kwan et al. Thermally assisted nonvolatile memory in monolayer MoS2 transistors. Nano Lett, 16, 6445(2016).
[15] Y T Lee, H Kwon, J S Kim et al. Nonvolatile ferroelectric memory circuit using black phosphorus nanosheet-based field-effect transistors with P(VDF-TrFE) polymer. ACS Nano, 9, 10394(2015).
[16] X Hou, H Zhang, C Liu et al. Charge-trap memory based on hybrid 0D quantum dot-2D WSe2 structure. Small, 14, 1800319(2018).
[17] A Mishra, A Janardanan, M Khare et al. Reduced multilayer graphene oxide floating gate flash memory with large memory window and robust retention characteristics. IEEE Electron Device Lett, 34, 1136(2013).
[18] Y Ding, L Liu, J Li et al. A semi-floating memory with 535% enhancement of refresh time by local field modulation. Adv Funct Mater, 30, 1908089(2020).
[19] J Li, L Liu, X Chen et al. Symmetric ultrafast writing and erasing speeds in quasi-nonvolatile memory via van der Waals heterostructures. Adv Mater, 31, 1808035(2019).
[20] G Wu, B Tian, L Liu et al. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat Electron, 3, 43(2020).
[21] C Liu, P Zhou. Memory Devices Based on Van der Waals Heterostructures. ACS Mater Lett, 2, 1101(2020).
[22] J Liu, Z Huang, F Lai et al. Controllable growth of the graphene from millimeter-sized monolayer to multilayer on Cu by chemical vapor deposition. Nanoscale Res Lett, 10, 455(2015).
[23] G P Dai, M H Wu, D K Taylor et al. Hybrid 3D graphene and aligned carbon nanofiber array architectures. RSC Adv, 2, 8965(2012).
[24] Y Cao, Z Wang, Q Bian et al. Phonon modes and photonic excitation transitions of MoS2 induced by top-deposited graphene revealed by Raman spectroscopy and photoluminescence. Appl Phys Lett, 114, 133103(2019).
[25] S Mouri, Y Miyauchi, K Matsuda. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett, 13, 5944(2013).
[26] G H Ahn, M Amani, H Rasool et al. Strain-engineered growth of two-dimensional materials. Nat Commun, 8, 608(2017).
