InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer

Yu-Qiang GU; Ming TAN; Yuan-Yuan WU; Jian-Ya LU; Xue-Fei LI; Shu-Long LU

doi:10.11972/j.issn.1001-9014.2021.06.002

Journals >Journal of Infrared and Millimeter Waves >Volume 40 >Issue 6 >Page 715 > Article

Journal of Infrared and Millimeter Waves
Vol. 40, Issue 6, 715 (2021)

InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer

Yu-Qiang GU^1、2, Ming TAN², Yuan-Yuan WU², Jian-Ya LU², Xue-Fei LI^1、2, and Shu-Long LU^2、*

Author Affiliations

¹Institute of Nano-Tech and Nano-Bionics，University of Science and Technology of China，Hefei 230026，China

²Key Laboratory of Nano-devices and Applications，Suzhou Institute of Nano-Tech and Nano-Bionics，Chinese Academy of Sciences，Suzhou 215123，China

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DOI: 10.11972/j.issn.1001-9014.2021.06.002 Cite this Article

Yu-Qiang GU, Ming TAN, Yuan-Yuan WU, Jian-Ya LU, Xue-Fei LI, Shu-Long LU. InAlAs/InGaAs avalanche photodiode with an optimized multiplication layer[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 715 Copy Citation Text

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Fig. 1. Structure of InAlAs/InGaAs APD

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（a）The 3-dB bandwidth vs multiplication factor with different multiplication layer thickness，and （b）the gain-bandwidth product vs multiplication layer thickness

Fig. 2. （a）The 3-dB bandwidth vs multiplication factor with different multiplication layer thickness，and （b）the gain-bandwidth product vs multiplication layer thickness

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Fig. 3. Distribution of electric field as a function of multiplication layer thickness

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Fig. 4. （a）Measured and Calculated I-V characteristic，（b）multiplication gain vs voltage，and （c）C-V characteristic of the InAlAs/InGaAs APD

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Fig. 5. 3-dB bandwidth vs voltage

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Fig. 6. （a）Measured and Calculated frequency characteristic，and （b）3-dB bandwidth vs multiplication gain of fabricated InAlAs/InGaAs APD

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Parameters	Units	InGaAs	InAlAs
Band gap	eV	0.75	1.42
Align		0.36	0.36
Permittivity		13.9	12.2
Electron SRH lifetime	s	4×10^-8	1×10^-18
Hole SRH lifetime	s	4×10^-8	1×10^-18
Electron mobility	cm²/V·s	10 000	3 000
Hole mobility	cm²/V·s	150	250
Radiative recombination coefficient	cm³/s	9.6×10^-1	1.2×10^-10

Table 1. Material parameters used in SILVACO physical modeling

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