[1] J C Campbell. Recent advances in avalanche photodiodes. Journal of Lightwave Technology, 34, 278-285(2016).

[2] M Nada, T Yoshimatsu, F Nakajima et al. A 42-GHz bandwidth avalanche photodiodes based on III-V compounds for 106-Gbit/s PAM4 applications. Journal of Lightwave Technology, 37, 260-265(2019).

[3] N Bertone, W Clark. Avalanche photodiode arrays provide versatility in ultrasensitive applications. Laser Focus World, 43, 69(2007).

[4] R Mitra, J D Beck, M R Skokan et al. Intelligent Integrated Microsystems(2006).

[5] X Meng, C H Tan, S Dimler et al. 1 550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22, 22608-22615(2014).

[6] K Zhao, S You, J Cheng et al. Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector. Applied Physics Letters, 93(2008).

[7] Yong-Fu LI, Jun-Liang LIU, Qing-Pu WANG et al. Avalanche characterization of high speed single-photon detector based on InGaAs/InP APD. J.Infrared Millim.Waves, 34, 427-431(2015).

[8] Bin LI, Wei CHEN, Xiao-Feng HUANG et al. InP cap layer doping density in InGaAs/InP single-photon avalanche diode. J.Infrared Millim.Waves, 36, 420-424(2017).

[9] T Nakata, J Ishihara, K Makita et al. Multiplication noise characterization of InAlAs-APD with heterojunction. Ieee Photonics Technology Letters, 21, 1852-1854(2009).

[10] J C Campbell. Recent advances in telecommunications avalanche photodiodes. Journal of Lightwave Technology, 25, 109-121(2007).

[11] M Nada, Y Muramoto, H Yokoyama et al. Inverted InAlAs/InGaAs avalanche photodiode with low-high-low electric field profile. Japanese Journal of Applied Physics, 51(2012).

[12] M S Ferraro, W R Clark, W S Rabinovich et al. InAlAs/InGaAs avalanche photodiode arrays for free space optical communication. Applied Optics, 54, F182-F188(2015).

[13] J Chen, Z Zhang, M Zhu et al. Optimization of InGaAs/InAlAs avalanche photodiodes. Nanoscale Research Letters, 12(2017).

[14] J W Parks, K E Brennan, L E Tarof. Macroscopic device simulation of InGaAs/InP based avalanche photodiodes. Vlsi Design, 6, 79-82(1998).

[15] I Watanabe, T Torikai, K Taguchi. Monte-Carlo simulation of impact ionization rates in inalas-ingaas square and graded barrier superlattice. IEEE Journal of Quantum Electronics, 31, 1826-1834(1995).

[16] I Watanabe, T Torikai, K Makita et al. Impact ionization rates in (100) AL0.48IN0.52AS. IEEE Electron Device Letters, 11, 437-438(1990).

[17] J W Parks, K F Brennan, L E J V D Tarof. Macroscopic device simulation of InGaAs/InP based avalanche photodiodes, 6, 79-82(2014).

[18] I Watanabe, T Torikai, K J I J o Q E Taguchi. Monte Carlo simulation of impact ionization rates in InAlAs-InGaAs square and graded barrier superlattice, 31, 1826-1834(1995).

[19] Y Matsushima, K Sakai, Y J I E D L Noda. New type InGaAs/InP heterostructure avalanche photodiode with buffer layer, 2, 179-181(2005).

[20] X Jiang, M A Itzler, R Ben-Michael et al. InGaAsP–InP Avalanche Photodiodes for Single Photon Detection, 13, 895-905(2007).

[21] Yu-Shun CHENG, Hui-Jun GUO, Hao LI et al. Device design pf planner PIN HgCdTe avalanche photodiode. J.Infrared Millim.Waves, 39, 8-14(2020).