[1] Cianca ERNESTINA, Rossi TOMMASO, Yahalom ASHER et al. EHF for Satellite Communications: The New Broadband Frontier, 99, 1858-1881.

[2] W.D. Palmer, I. Abdomerovic, P.M. Asbeck et al. Advancing Silicon mm-wave Transmitter ICs for Satellite Communications, 49-52.

[3] J. P. Fraysse, J. Richard, M. Maignan et al. A 20W Ka-band Radial Solid-State Power Amplifier with 20% Associated Power-Added Efficiency, 688-691(2013).

[4] Datta KUNAL, Roderick JONATHAN, Hashemi HOSSEIN. A 22.4 dBm Two-Way Wilkinson Power-Combined Q-Band SiGe Class-E Power Amplifier With 23% Peak PAE, 1-4(2012).

[5] Peng HUANG, Kaizhe GUO, Yi-Ming YU et al. A 21.08 dBm Q-Band Power Amplifier in 90-nm CMOS Process, 1-4(2014).

[6] KIM-Lien Ngo-Wah, Goel JITENDRA, Yeong-Chang CHOU et al. A V-band Eight-Way Combined Solid-State Power Amplifier With 12.8 Watts Output Power, 1371-1374.

[7] Jian LIU, Wen-Hua CHEN, Zheng-He FENG. Design of a V-Band Power Amplifier/Combiner based on Spatial Power-combining Technique, 1127-1129(2013).

[8] Hamidian AMIN, Portela HENRIQUE, Boeck GEORG. High Power V-Band Power Amplifier, 783-786(2009).

[9] Schellenberg JAMES, Kim BUMJIN, Phan TRONG. W-Band, Broadband 2W GaN MMIC, 1-4.

[10] Ming WANG, Xiao-Qiang XIE, Xiang ZHAO et al. A Compact Four-Way Power Combiner/Divider in W-Band, 47-50(2013).

[11] W. Shaobing, G. Jianfeng, W. Weibo, Z. Junyun. W-band MMIC PA with Ultrahigh Power Density in 100-nm AlGaN/GaN Technology. IEEE Trans. Electron Devices, 63, 3882-3886.

[12] Zhang-Ju HOU, Yang YANG, Leung CHIU et al. A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-μm Technology. IEEE Trans. Circuit and Systems, 65, 2139-2150(2018).

[13] Huei WANG, Samoska LORENE, Gaier TODD et al. Power-Amplifier Modules Covering 70–113 GHz Using MMICs. IEEE Trans. Microw. Theory Tech, 49, 9-16(2019).

[14] Marti DIEGO, Lugani LORENZO, JEAN-François Carlin et al. W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon. IEEE Electron Device Lett, 37, 1025-1028(2016).

[15] D. Marti, S. Tirelli, V. Teppati et al. 94-GHz Large-signal Operation of AlInN/GaN High-electron-mobility Transistors on Silicon with Regrown Ohmic Contacts. IEEE Electron Device Lett, 36, 17-19(2015).

[16] Lin H.-C., Rebeiz G. M.. A 110–134-GHz SiGe Amplifier with Peak Output Power of 100-120 mW. IEEE Trans. Microw. Theory Techn, 62, 2990-3000(2014).

[17] Lin H.-C., Rebeiz G. M.. A 70–80-GHz SiGe Amplifier with Peak Output Power of 27.3 dBm. IEEE Trans. Microw. Theory Techn, 64, 2039-2049(2016).

[18] ROBERT R. Ferber, TODD C.Gaier, JOHN C. Pearson et al. W Band Power Amplifier Development for the Herschel HIFI Instrument. Millimeter and Submillimeter Detectors for Astronomy, ISBN: 0-8194-4634-3.2/2003, 468-479.

[19] Schellenberg JAMES, Watkins EDWARD, Micovic MIROSLAV et al. W-Band 5W Solid-State Power Amplifier/Combiner, 240-243.

[20] Dan ZHONG, Jun XU, Mao-Yan WANG et al. A 92–96 GHz W-band Power Amplifier, 187-189(2012).