Congyu Hu, Katsuhiko Saito, Tooru Tanaka, Qixin Guo. Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition[J]. Journal of Semiconductors, 2019, 40(12): 122801
- Journal of Semiconductors
- Vol. 40, Issue 12, 122801 (2019)
Fig. 1. Dependence of growth rate of film on plasma RF power ranged from 0 to 300 W at substrate temperature of 500 °C.
Fig. 2. XRD 2θ /θ scan for films fabricated at 500 °C and RF power ranged from 0 to 300 W.
Fig. 3. Raman scattering spectra of samples prepared at substrate temperature of 500 °C and power ranged from 0 to 300 W.
Fig. 4. (Color online) Transmittance of films fabricated at fixed substrate temperature of 500 °C but RF power ranged from 0 to 300 W.
Fig. 5. (Color online) Surface morphology of Ga2O3 film at 0.01 Pa and at (a) 500 °C, 0 W; (b) 500 °C, 100 W; (c) 500 °C, 200 W; (d) 500 °C, 300 W on a 10 × 10 μ m2 area.
Fig. 6. Dependence of root-mean-squared surface roughness of Ga2O3 film on RF power ranged from 0 to 300 W at fixed substrate temperature of 500 °C.
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Table 1. Phonon modes for different samples compared with bulk β -Ga2O3.
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