• Photonics Research
  • Vol. 6, Issue 4, 290 (2018)
Yue Wang1, Bing Wang1, Wardhana A. Sasangka1, Shuyu Bao1、2, Yiping Zhang2, Hilmi Volkan Demir2, Jurgen Michel1、3, Kenneth Eng Kian Lee1, Soon Fatt Yoon1、2, Eugene A. Fitzgerald1、3, Chuan Seng Tan1、2、4, and Kwang Hong Lee1、*
Author Affiliations
  • 1Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602, Singapore
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
  • 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4e-mail: tancs@ntu.edu.sg
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    DOI: 10.1364/PRJ.6.000290 Cite this Article Set citation alerts
    Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator[J]. Photonics Research, 2018, 6(4): 290 Copy Citation Text show less
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    The article is cited by 6 article(s) from Web of Science.
    Yue Wang, Bing Wang, Wardhana A. Sasangka, Shuyu Bao, Yiping Zhang, Hilmi Volkan Demir, Jurgen Michel, Kenneth Eng Kian Lee, Soon Fatt Yoon, Eugene A. Fitzgerald, Chuan Seng Tan, Kwang Hong Lee. High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator[J]. Photonics Research, 2018, 6(4): 290
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