• Journal of Semiconductors
  • Vol. 42, Issue 4, 041306 (2021)
Jianou Huang1, Chao Li1, Rongguo Lu2, Lianyan Li3, and Zizheng Cao1
Author Affiliations
  • 1Eindhoven University of Technology, Eindhoven 5600MB, The Netherlands
  • 2State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science & Technology of China, Chengdu 610054, China
  • 3College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
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    DOI: 10.1088/1674-4926/42/4/041306 Cite this Article
    Jianou Huang, Chao Li, Rongguo Lu, Lianyan Li, Zizheng Cao. Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. Journal of Semiconductors, 2021, 42(4): 041306 Copy Citation Text show less
    (Color online) A typical fiber-optic communication network for the core, metro and access network scenarios, where the IM/DD links are addressed in the metroedge and intra-/inter-data center networks. CO: center office; RN: remote node; DCI: datacenter interconnects. © [2020] IEEE. Reprinted, with permission, from Ref. [4].
    Fig. 1. (Color online) A typical fiber-optic communication network for the core, metro and access network scenarios, where the IM/DD links are addressed in the metroedge and intra-/inter-data center networks. CO: center office; RN: remote node; DCI: datacenter interconnects. © [2020] IEEE. Reprinted, with permission, from Ref. [4].
    (Color online) A schematic diagram of the IM/DD system based on DML. DSP: digital signal processing; DAC: digital-to-analog convertor; LDD: laser diode driver; DML: directly modulated laser; SMF: single mode fiber; MMF: multi-mode fiber; ADC: analog-to-digital convertor.
    Fig. 2. (Color online) A schematic diagram of the IM/DD system based on DML. DSP: digital signal processing; DAC: digital-to-analog convertor; LDD: laser diode driver; DML: directly modulated laser; SMF: single mode fiber; MMF: multi-mode fiber; ADC: analog-to-digital convertor.
    Model used in the rate equation analysis of semiconductor lasers. Copyright © 2012 John Wiley & Sons, Inc. Reprinted, with permission, from Ref. [ 20].
    Fig. 3. Model used in the rate equation analysis of semiconductor lasers. Copyright © 2012 John Wiley & Sons, Inc. Reprinted, with permission, from Ref. [ 20].
    (Color online) The sketch of the modulation transfer function for increasing values of relaxation resonance frequency (normalized to ). Including relationships between the peak frequency , the resonance frequency , and the 3-dB down cutoff frequency .
    Fig. 4. (Color online) The sketch of the modulation transfer function for increasing values of relaxation resonance frequency (normalized to ). Including relationships between the peak frequency , the resonance frequency , and the 3-dB down cutoff frequency .
    (Color online) Schematics of different types of coupled-cavity lasers. (a) Two-section DBR laser. © [1998] IEEE. Reprinted, with permission, from Ref. [41]. (b) Passive feedback laser. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Reprinted, with permission, from Ref. [35]. (c) DFB+R laser. Reprinted with permission from Ref. [17] © The Optical Society. (d) DR laser. © [2017] IEEE. Reprinted, with permission, from Ref. [38]. HR: high-reflection coating, 3%: 3%-reflection coating, AR: anti-reflection coating.
    Fig. 5. (Color online) Schematics of different types of coupled-cavity lasers. (a) Two-section DBR laser. © [1998] IEEE. Reprinted, with permission, from Ref. [41]. (b) Passive feedback laser. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Reprinted, with permission, from Ref. [35]. (c) DFB+R laser. Reprinted with permission from Ref. [17] © The Optical Society. (d) DR laser. © [2017] IEEE. Reprinted, with permission, from Ref. [38]. HR: high-reflection coating, 3%: 3%-reflection coating, AR: anti-reflection coating.
    (Color online) (a) Example of the detuned loading and PPR in a two-section DBR laser: round trip gain (blue curve) and phase (red dashed curve) function at the DBR threshold. The squared red marker represents the lasing mode; the blue markers indicate nonlasing cavity modes. The green asterisks on the reflectivity curve represent the modes locations in the maximum detuned loading condition. © [2013] IEEE. Reprinted, with permission, from Ref. [42]. (b) Example of the detuned loading in a DFB+R laser: in-cavity etalon profile for DFB+R with 3% coating (red), passive feedback laser (PFL) with HR coating (black), and the stopband of the DFB section (blue). Reprinted with the permission from the authors of Ref. [40].
    Fig. 6. (Color online) (a) Example of the detuned loading and PPR in a two-section DBR laser: round trip gain (blue curve) and phase (red dashed curve) function at the DBR threshold. The squared red marker represents the lasing mode; the blue markers indicate nonlasing cavity modes. The green asterisks on the reflectivity curve represent the modes locations in the maximum detuned loading condition. © [2013] IEEE. Reprinted, with permission, from Ref. [42]. (b) Example of the detuned loading in a DFB+R laser: in-cavity etalon profile for DFB+R with 3% coating (red), passive feedback laser (PFL) with HR coating (black), and the stopband of the DFB section (blue). Reprinted with the permission from the authors of Ref. [40].
    (Color online) (a) Measured lasing spectrum at 27 mA with using PPR. (b) Measured small-signal responses of the laser at various bias currents, with using PPR. (c) Measured lasing spectrum at 27 mA without using PPR. (d) Measured small-signal responses of the laser at various bias currents, without using PPR. The laser has a 50-μm-long active section, and the response of –3 dB is marked by a dashed horizontal grey line. Reprinted by permission from Springer Nature, Nature Photonics[16], 2021.
    Fig. 7. (Color online) (a) Measured lasing spectrum at 27 mA with using PPR. (b) Measured small-signal responses of the laser at various bias currents, with using PPR. (c) Measured lasing spectrum at 27 mA without using PPR. (d) Measured small-signal responses of the laser at various bias currents, without using PPR. The laser has a 50-μm-long active section, and the response of –3 dB is marked by a dashed horizontal grey line. Reprinted by permission from Springer Nature, Nature Photonics[16], 2021.
    StandardReach (m)Modulation schemeBaud rate (Gbaud)
    400G BASE-SR16100NRZ26.6
    400G BASE-DR4500PAM453.1
    400G BASE-FR82000PAM426.6
    400G BASE-LR810000PAM426.6
    200G BASE-SR4100PAM426.6
    200G BASE-DR4500PAM426.6
    200G BASE-FR42000PAM426.6
    200G BASE-LR410000PAM426.6
    100G BASE-SR1070/100NRZ10.3
    100G BASE-SR2400PAM426.6
    100G BASE-DR500PAM453.1
    100G BASE-SR470/100NRZ25.8
    100G SWDM400NRZ25.8
    100G PSM4500NRZ25.8
    100G BASE-LR410000NRZ25.8
    100G BASE-ER440000NRZ25.8
    50G BASE-SR100PAM426.6
    50G BASE-FR2000PAM426.6
    50G BASE-LR10000PAM426.6
    Table 1. High-speed optical interface standards.
    Data rate (Gb/s)Reach (km)SchemePackage
    250.3DuplexSFP28
    2510DuplexSFP28
    2510BidiSFP28
    2515/20BidiSFP28
    2510CWDMSFP28
    2510MWDMSFP28
    2510/20LWDMSFP28
    2510DWDMSFP28
    100104WDMQSFP28
    10010BidiQSFP28/CFP28
    Table 2. Optical modules for 5G fronthaul.
    SymbolMeaning
    Active-region volume
    Mode volume
    Confinement factor
    Spontaneous recombination rate
    Nonradiative recombination rate
    Stimulated absorption rate
    Stimulated emission rate
    Spontaneous emission factor
    Injection or internal efficiency of the laser
    Optical efficiency of the laser
    Injection current
    Elementary charge
    Carrier density
    Photon density
    Useful output power
    Spontaneously generated optical power
    Photon lifetime
    Group velocity of the mode
    Material gain
    Table 3. The meaning of the symbols in the rate equations.
    No.YearStructural characteristicsModulation bandwidthCitation
    11993GaAs-based MQW laser, increased strain, p-doping and number of QWs, 200-μm short cavity 30 GHz @ 114 mA[21]
    21994GaAs-based MQW laser, low cladding layer growth temperature, 100-μm short cavity 33 GHz @ 65 mA[22]
    31995GaAs-based MQW laser, carbon doped active region, 130-μm short cavity 37 GHz @ 160 mA[23]
    41996GaAs-based MQW laser, asymetric cladding layer growth temperature, modified doping sequence, 130-μm short cavityx 40 GHz @ 155 mA[24]
    519971.55-μm InGaAlAs-InGaAsP MQW laser with strain compensation, 120-μm short cavity 30 GHz @ 100 mA[25]
    620091.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DFB laser, 150-μm short cavity fR= 20.5 GHz @ ~60 mA [27]
    72011Uncooled 1.3-μm InGaAlAs MQW ridge waveguide DFB laser, 160-μm short cavity 14 GHz @ 95 °C 60 mA[28]
    820111.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser, 100-μm short cavity fR= 25 GHz @ 40 mA [29]
    920121.3-μm InGaAlAs MQW ridge waveguide DFB laser with passive waveguide, 150-μm short cavity 30 GHz @ 45 mA[14]
    1020131.3-μm InGaAlAs-based MQW ridge waveguide DFB laser, 150-μm short cavity 34 GHz @ 60 mA[30]
    1120151.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser array, 125-μm short cavity 30 GHz @ 80 mA[31]
    1219971.55-μm two-section InGaAsP MQW DBR-laser, with detuned loading effect 30 GHz @ 130 mA[32]
    132005Three-section InGaAsP DBR laser, with detuned loading effect and PPR effect37 GHz @ 172 mA[33]
    1420071.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 29 GHz @ 40 mA[34]
    1520111.3/1.5-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 37 GHz @ 70 mA[35]
    1620111.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect 34 GHz @ 60 mA[36]
    1720161.55-μm InGaAlAs MQW optically controlled external cavity laser, with PPR effect 59 GHz[37]
    1820171.3-μm InGaAlAs MQW short-cavity DR laser, with detuned loading effect and PPR effect 55 GHz @ 36.2 mA[38]
    1920181.3-μm InGaAlAs MQW short-cavity active DR laser, with detuned loading effect 24 GHz @ 60 mA[39]
    2020201.3-μm InGaAlAs MQW lateral-current-injection membrane DR laser on SIC substrate, with detuned DBR and PPR effect 108 GHz @ 27 mA[16]
    2120201.3-μm DFB+R laser, with detuned loading effect and PPR effect 65 GHz[17]
    2220201.3-μm DFB+R laser, with detuned loading effect and PPR effect 75 GHz @ 65 mA[40]
    Table 4. Reported stare-of-the-art works of DMLs.
    YearModulation deviceLine rate (Gb/s)Modulation formatLinkBand (nm)FEC thresholdDSP
    * The first 200 Gb/s IM/DD transmission with a single-polarization single-wavelength.
    2016[50, 51]* 59-GHz LE-TWEAM-DFB214PAM-410-km SMF13053.8 × 10–3FFE
    2016[52, 53]55-GHz EAMDFB300DMT10-km SMF13052.7 × 10–2AMUX
    2017[54]40-GHz DFB+MZM200PAM-40.5-km SSMF15453.8 × 10–3MLSD
    2017[55]100-GHz DFB-TWEAM200PAM-40.4-km SMF15502 × 102DFE
    2017[56]100-GHz DFB-TWEAM209/200DMT0.8-km SMF/ 1.6-km SMF 15502.7 × 10–2TD-NE
    2018[57]54-GHz DFB+MZM200/300PAM-4/PAM-81.2-km SMF15503.8 × 10–3/ 2.7 × 10–2FDE
    2018[58]100-GHz DFB-TWEAM204OOK10-km SMF+DCF15503.8 × 10–3FFE, MAP
    2018[59]30-GHz CW+MZM224DMT1-km SMFC-band3.8 × 10–3NLE
    2018[60]32-GHz CW+MZM225DB PAM-6btbC-band3.8 × 10–3NFFE, NC, MLSE
    2018[61]100-GHz DFB-TWEAM200DMT1.6-km SSMF15502.7 × 10–2TD-NE
    2019[62]100-GHz DFB-TWEAM330DMT-128QAM0.4-km SMFC-band2.7 × 10–2Lattice pilot algorithm for CE
    2019[63]100-GHz DFB-TWEAM204OOK10-km SMF15503.8 × 10–3LFFE
    2019[64]40-GHz CW+MZM200PAM-440-km SMF15503.8 × 10–3Volterra
    2019[65]65-GHz ECL+CC-SOH MZM200PAM-4btb15502.7 × 10–2
    2019[66]22.5-GHz ECL+TW-MZM200PAM-6btb15472.7 × 10–2PF, MLSD
    2019[67]30-GHz CW+MZM2403D DB PAM-8btb15513.8 × 10–33D mapping, Volterra
    2019[68]40-GHz EML260PS-PAM-81-km NZDSF15382.7 × 10–2Pre-EQ clipping
    2019[69]30-GHz CW+DDMZM255PAM-8btb13093.8 × 10–3NL-MLSE
    2019[70]40-GHz EML204.75PAM-81-km SMF15382.7 × 10–2FFE, LUT, ANF
    2020[4]100-GHz DFB+TWEAM200PAM-40.4-km SMF15502.7 × 10–2FFE, DFE
    2020[71]100-GHz DML321DMT2-km SMF12952.7 × 10–2Linear Wiener filter, Volterra
    2020[17]65-GHz DML411/368DMT0/15-km SSMF13132.7 × 10–2LMS
    Table 5. Reported state-of-the-art works with beyond 200 Gb/s per channel IM/DD transmissions.
    Jianou Huang, Chao Li, Rongguo Lu, Lianyan Li, Zizheng Cao. Beyond the 100 Gbaud directly modulated laser for short reach applications[J]. Journal of Semiconductors, 2021, 42(4): 041306
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