Author Affiliations
1Eindhoven University of Technology, Eindhoven 5600MB, The Netherlands2State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science & Technology of China, Chengdu 610054, China3College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, Chinashow less
Fig. 1. (Color online) A typical fiber-optic communication network for the core, metro and access network scenarios, where the IM/DD links are addressed in the metroedge and intra-/inter-data center networks. CO: center office; RN: remote node; DCI: datacenter interconnects. © [2020] IEEE. Reprinted, with permission, from Ref. [4].
Fig. 2. (Color online) A schematic diagram of the IM/DD system based on DML. DSP: digital signal processing; DAC: digital-to-analog convertor; LDD: laser diode driver; DML: directly modulated laser; SMF: single mode fiber; MMF: multi-mode fiber; ADC: analog-to-digital convertor.
Fig. 3. Model used in the rate equation analysis of semiconductor lasers. Copyright © 2012 John Wiley & Sons, Inc. Reprinted, with permission, from Ref. [ 20].
Fig. 4. (Color online) The sketch of the modulation transfer function for increasing values of relaxation resonance frequency
(normalized to
). Including relationships between the peak frequency
, the resonance frequency
, and the 3-dB down cutoff frequency
.
Fig. 5. (Color online) Schematics of different types of coupled-cavity lasers. (a) Two-section DBR laser. © [1998] IEEE. Reprinted, with permission, from Ref. [41]. (b) Passive feedback laser. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Reprinted, with permission, from Ref. [35]. (c) DFB+R laser. Reprinted with permission from Ref. [17] © The Optical Society. (d) DR laser. © [2017] IEEE. Reprinted, with permission, from Ref. [38]. HR: high-reflection coating, 3%: 3%-reflection coating, AR: anti-reflection coating.
Fig. 6. (Color online) (a) Example of the detuned loading and PPR in a two-section DBR laser: round trip gain (blue curve) and phase (red dashed curve) function at the DBR threshold. The squared red marker represents the lasing mode; the blue markers indicate nonlasing cavity modes. The green asterisks on the reflectivity curve represent the modes locations in the maximum detuned loading condition. © [2013] IEEE. Reprinted, with permission, from Ref. [42]. (b) Example of the detuned loading in a DFB+R laser: in-cavity etalon profile for DFB+R with 3% coating (red), passive feedback laser (PFL) with HR coating (black), and the stopband of the DFB section (blue). Reprinted with the permission from the authors of Ref. [40].
Fig. 7. (Color online) (a) Measured lasing spectrum at 27 mA with using PPR. (b) Measured small-signal responses of the laser at various bias currents, with using PPR. (c) Measured lasing spectrum at 27 mA without using PPR. (d) Measured small-signal responses of the laser at various bias currents, without using PPR. The laser has a 50-μm-long active section, and the response of –3 dB is marked by a dashed horizontal grey line. Reprinted by permission from Springer Nature, Nature Photonics[16], 2021.
Standard | Reach (m) | Modulation scheme | Baud rate (Gbaud) |
---|
400G BASE-SR16 | 100 | NRZ | 26.6 | 400G BASE-DR4 | 500 | PAM4 | 53.1 | 400G BASE-FR8 | 2000 | PAM4 | 26.6 | 400G BASE-LR8 | 10000 | PAM4 | 26.6 | 200G BASE-SR4 | 100 | PAM4 | 26.6 | 200G BASE-DR4 | 500 | PAM4 | 26.6 | 200G BASE-FR4 | 2000 | PAM4 | 26.6 | 200G BASE-LR4 | 10000 | PAM4 | 26.6 | 100G BASE-SR10 | 70/100 | NRZ | 10.3 | 100G BASE-SR2 | 400 | PAM4 | 26.6 | 100G BASE-DR | 500 | PAM4 | 53.1 | 100G BASE-SR4 | 70/100 | NRZ | 25.8 | 100G SWDM | 400 | NRZ | 25.8 | 100G PSM4 | 500 | NRZ | 25.8 | 100G BASE-LR4 | 10000 | NRZ | 25.8 | 100G BASE-ER4 | 40000 | NRZ | 25.8 | 50G BASE-SR | 100 | PAM4 | 26.6 | 50G BASE-FR | 2000 | PAM4 | 26.6 | 50G BASE-LR | 10000 | PAM4 | 26.6 |
|
Table 1. High-speed optical interface standards.
Data rate (Gb/s) | Reach (km) | Scheme | Package |
---|
25 | 0.3 | Duplex | SFP28 | 25 | 10 | Duplex | SFP28 | 25 | 10 | Bidi | SFP28 | 25 | 15/20 | Bidi | SFP28 | 25 | 10 | CWDM | SFP28 | 25 | 10 | MWDM | SFP28 | 25 | 10/20 | LWDM | SFP28 | 25 | 10 | DWDM | SFP28 | 100 | 10 | 4WDM | QSFP28 | 100 | 10 | Bidi | QSFP28/CFP28 |
|
Table 2. Optical modules for 5G fronthaul.
Symbol | Meaning |
---|
| Active-region volume | | Mode volume | | Confinement factor | | Spontaneous recombination rate | | Nonradiative recombination rate | | Stimulated absorption rate | | Stimulated emission rate | | Spontaneous emission factor | | Injection or internal efficiency of the laser | | Optical efficiency of the laser | | Injection current | | Elementary charge | | Carrier density | | Photon density | | Useful output power | | Spontaneously generated optical power | | Photon lifetime | | Group velocity of the mode | | Material gain |
|
Table 3. The meaning of the symbols in the rate equations.
No. | Year | Structural characteristics | Modulation bandwidth | Citation |
---|
1 | 1993 | GaAs-based MQW laser, increased strain, p-doping and number of QWs, 200-μm short cavity
| 30 GHz @ 114 mA | [21]
| 2 | 1994 | GaAs-based MQW laser, low cladding layer growth temperature, 100-μm short cavity
| 33 GHz @ 65 mA | [22]
| 3 | 1995 | GaAs-based MQW laser, carbon doped active region, 130-μm short cavity
| 37 GHz @ 160 mA | [23]
| 4 | 1996 | GaAs-based MQW laser, asymetric cladding layer growth temperature, modified doping sequence, 130-μm short cavityx
| 40 GHz @ 155 mA | [24]
| 5 | 1997 | 1.55-μm InGaAlAs-InGaAsP MQW laser with strain compensation, 120-μm short cavity
| 30 GHz @ 100 mA | [25]
| 6 | 2009 | 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DFB laser, 150-μm short cavity
| fR= 20.5 GHz @
~60 mA
| [27]
| 7 | 2011 | Uncooled 1.3-μm InGaAlAs MQW ridge waveguide DFB laser, 160-μm short cavity
| 14 GHz @ 95 °C 60 mA | [28]
| 8 | 2011 | 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser,
100-μm short cavity
| fR= 25 GHz @ 40 mA
| [29]
| 9 | 2012 | 1.3-μm InGaAlAs MQW ridge waveguide DFB laser with passive waveguide, 150-μm short cavity
| 30 GHz @ 45 mA | [14]
| 10 | 2013 | 1.3-μm InGaAlAs-based MQW ridge waveguide DFB laser, 150-μm short cavity
| 34 GHz @ 60 mA | [30]
| 11 | 2015 | 1.3-μm InGaAlAs MQW semi-insulating buried-heterostructure DR laser array, 125-μm short cavity
| 30 GHz @ 80 mA | [31]
| 12 | 1997 | 1.55-μm two-section InGaAsP MQW DBR-laser, with detuned loading effect
| 30 GHz @ 130 mA | [32]
| 13 | 2005 | Three-section InGaAsP DBR laser, with detuned loading effect and PPR effect | 37 GHz @ 172 mA | [33]
| 14 | 2007 | 1.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect
| 29 GHz @ 40 mA | [34]
| 15 | 2011 | 1.3/1.5-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect
| 37 GHz @ 70 mA | [35]
| 16 | 2011 | 1.55-μm InGaAsP MQW passive-feedback DFB laser, with PPR effect
| 34 GHz @ 60 mA | [36]
| 17 | 2016 | 1.55-μm InGaAlAs MQW optically controlled external cavity laser, with PPR effect
| 59 GHz | [37]
| 18 | 2017 | 1.3-μm InGaAlAs MQW short-cavity DR laser, with detuned loading effect and PPR effect
| 55 GHz @ 36.2 mA | [38]
| 19 | 2018 | 1.3-μm InGaAlAs MQW short-cavity active DR laser, with detuned loading effect
| 24 GHz @ 60 mA | [39]
| 20 | 2020 | 1.3-μm InGaAlAs MQW lateral-current-injection membrane DR laser on SIC substrate, with detuned DBR and PPR effect
| 108 GHz @ 27 mA | [16]
| 21 | 2020 | 1.3-μm DFB+R laser, with detuned loading effect and PPR effect
| 65 GHz | [17]
| 22 | 2020 | 1.3-μm DFB+R laser, with detuned loading effect and PPR effect
| 75 GHz @ 65 mA | [40]
|
|
Table 4. Reported stare-of-the-art works of DMLs.
Year | Modulation device | Line rate (Gb/s) | Modulation format | Link | Band (nm) | FEC threshold | DSP |
---|
* The first 200 Gb/s IM/DD transmission with a single-polarization single-wavelength. | 2016[50, 51]*
| 59-GHz LE-TWEAM-DFB | 214 | PAM-4 | 10-km SMF | 1305 | 3.8 × 10–3 | FFE | 2016[52, 53] | 55-GHz EAMDFB | 300 | DMT | 10-km SMF | 1305 | 2.7 × 10–2 | AMUX | 2017[54] | 40-GHz DFB+MZM | 200 | PAM-4 | 0.5-km SSMF | 1545 | 3.8 × 10–3 | MLSD | 2017[55] | 100-GHz DFB-TWEAM | 200 | PAM-4 | 0.4-km SMF | 1550 | 2 × 102 | DFE | 2017[56] | 100-GHz DFB-TWEAM | 209/200 | DMT | 0.8-km SMF/
1.6-km SMF
| 1550 | 2.7 × 10–2 | TD-NE | 2018[57] | 54-GHz DFB+MZM | 200/300 | PAM-4/PAM-8 | 1.2-km SMF | 1550 | 3.8 × 10–3/
2.7 × 10–2 | FDE | 2018[58] | 100-GHz DFB-TWEAM | 204 | OOK | 10-km SMF+DCF | 1550 | 3.8 × 10–3 | FFE, MAP | 2018[59] | 30-GHz CW+MZM | 224 | DMT | 1-km SMF | C-band | 3.8 × 10–3 | NLE | 2018[60] | 32-GHz CW+MZM | 225 | DB PAM-6 | btb | C-band | 3.8 × 10–3 | NFFE, NC, MLSE | 2018[61] | 100-GHz DFB-TWEAM | 200 | DMT | 1.6-km SSMF | 1550 | 2.7 × 10–2 | TD-NE | 2019[62] | 100-GHz DFB-TWEAM | 330 | DMT-128QAM | 0.4-km SMF | C-band | 2.7 × 10–2 | Lattice pilot algorithm for CE | 2019[63] | 100-GHz DFB-TWEAM | 204 | OOK | 10-km SMF | 1550 | 3.8 × 10–3 | LFFE | 2019[64] | 40-GHz CW+MZM | 200 | PAM-4 | 40-km SMF | 1550 | 3.8 × 10–3 | Volterra | 2019[65] | 65-GHz ECL+CC-SOH MZM | 200 | PAM-4 | btb | 1550 | 2.7 × 10–2 | – | 2019[66] | 22.5-GHz ECL+TW-MZM | 200 | PAM-6 | btb | 1547 | 2.7 × 10–2 | PF, MLSD | 2019[67] | 30-GHz CW+MZM | 240 | 3D DB PAM-8 | btb | 1551 | 3.8 × 10–3 | 3D mapping, Volterra | 2019[68] | 40-GHz EML | 260 | PS-PAM-8 | 1-km NZDSF | 1538 | 2.7 × 10–2 | Pre-EQ clipping | 2019[69] | 30-GHz CW+DDMZM | 255 | PAM-8 | btb | 1309 | 3.8 × 10–3 | NL-MLSE | 2019[70] | 40-GHz EML | 204.75 | PAM-8 | 1-km SMF | 1538 | 2.7 × 10–2 | FFE, LUT, ANF | 2020[4] | 100-GHz DFB+TWEAM | 200 | PAM-4 | 0.4-km SMF | 1550 | 2.7 × 10–2 | FFE, DFE | 2020[71] | 100-GHz DML | 321 | DMT | 2-km SMF | 1295 | 2.7 × 10–2 | Linear Wiener filter, Volterra | 2020[17] | 65-GHz DML | 411/368 | DMT | 0/15-km SSMF | 1313 | 2.7 × 10–2 | LMS |
|
Table 5. Reported state-of-the-art works with beyond 200 Gb/s per channel IM/DD transmissions.