[1] Y Zhang, i C Joishi, Z Xia et al. Demonstration of β-(Al_xGa_1–x)₂O₃/Ga₂O₃ double heterostructure field effect transistors. Appl Phys Lett, 112, 233503(2018).

[2] Y Lv, X Zhou, S Long et al. Source-field-plated β-Ga₂O₃ MOSFET with record power figure of merit of 50.4 MW/cm². IEEE Electron Device Lett, 39, 1(2019).

[3] A J Green, K Chabak, E R Heller et al. 3.8 MV/cm breakdown strength of MOVPE-grown Sn-doped Ga₂O₃ MOSFETs. IEEE Electron Device Lett, 37, 902(2016).

[4] K D Chabak, N Moser, A J Green et al. Enhancement-mode Ga₂O₃ wrap-gate fin field-effect transistors on native (100) β-Ga₂O₃ substrate with high breakdown voltage. Appl Phys Lett, 109, 213501(2016).

[5] M Tadjer, N Mahadik, V D Wheeler et al. Communications-A (001) β-Ga₂O₃ MOSFETs with +2.9 V threshold voltage and HfO₂ gate dielectric. ECS J Solid State Sci Tech, 5, 468(2016).

[6] K Zeng, J S Wallace, C Heimburger et al. Ga₂O₃ MOSFETs using spin-on-glass source/drain doping technology. IEEE Electron Device Lett, 38, 513(2017).

[7] C J H Wort, R S Balmer. Diamond as an electronic material. Mater Today, 11, 22(2008).

[8] H Fu, I Baranowski, X Huang et al. Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV. IEEE Electron Device Lett, 38, 1286(2017).

[9] B J Baliga. Power semiconductor-device figure of merit for high-frequency applications. IEEE Electron Device Lett, 10, 455(1989).

[10] H V Wenckstern. Group-III sesquioxides: growth, physical properties and devices. Adv Electron Mater, 3, 1600350(2017).

[11] S Yoshioka, H Hayashi, A Kuwabara et al. Structures and energetics of Ga₂O₃ polymorphs. J Phys: Condens Matter, 19, 346211(2007).

[12] H He, R Orlando, M A Blanco et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃ in its monoclinic and hexagonal phases. Phys Rev B, 74, 195123(2006).

[13] H He, M A Blanco, R Pandey. Electronic and thermodynamic properties of Ga₂O₃. Appl Phys Lett, 88, 261904(2006).

[14] P Kroll, R Dronskowski, M Martin. Formation of spinel-type gallium oxynitrides: a density-functional study of binary and ternary phases in the system Ga–O–N. J Mater Chem, 15, 3296(2005).

[15] H Y Playford, A C Hannon, E R Barney et al. Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction. Eur J, 19, 2803(2013).

[16] H Peelaers, C G Van de Walle. Brillouin zone and band structure of β-Ga₂O₃. Phys Status Solidi B, 252, 828(2015).

[17] J B Varley, J R Weber, A Janotti et al. Oxygen vacancies and donor impurities in β-Ga₂O₃. Appl Phys Lett, 97, 142106(2010).

[18] V I Vasyltsiv, Y I Rym, Y M Zakharo. Optical absorption and photoconductivity at the band edge of β-Ga_2−xIn_xO₃. Phys Status Solidi B, 195, 653(1996).

[19] Z Galazka, K Irmscher, R Uecker et al. On the bulk β-Ga₂O₃ single crystals grown by the Czochralski method. J Cryst Growth, 404, 184(2014).

[20] Z Galazka, R Uecker, K Irmscher et al. Czochralski growth and characterization of β-Ga₂O₃ single crystals. Cryst Res Technol, 45, 1229(2010).

[21] A Kuramata, K Koshi, S Watanabe et al. High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth. Jpn J App Phys Part 1, 55, 1202A2(2016).

[22] E G Vıllora, Y Morioka, T Atou. Infrared reflectance and electrical conductivity of β-Ga₂O₃. Phys Status Solidi A, 193, 187(2002).

[23] J Zhang, B Li, C Xia. Growth and spectral characterization of β-Ga₂O₃ single crystals. J Phys Chem Solids, 67, 2448(2006).

[24] N Suzuki, S Ohira, M Tanaka. Fabrication and characterization of transparent conductive Sn-doped β-Ga₂O₃ single crystal. Phys Status Solidi C, 4, 2310(2007).

[25] M Mohamed, K Irmscher, C Janowitz et al. Schottky barrier height of Au on the transparent semiconducting oxide β-Ga₂O₃. Appl Phys Lett, 101, 132106(2012).

[26] K Suzuki, T Okamoto, M Takata. Crystal growth of β-Ga₂O₃ by electric current heating method. Ceram Int, 30, 1679(2004).

[27] J Zhang, C Xia, Q Deng et al. Growth and characterization of new transparent conductive oxides single crystals β-Ga₂O₃: Sn. J Phys Chem Solids, 67, 1656(2006).

[28] Y Tomm, P Reiche, D Klimm et al. Czochralski grown Ga₂O₃ crystals. J Cryst Growth, 220, 510(2000).

[29] Z Galazka, R Uecker, D Klimm et al. Scaling-up of bulk β-Ga₂O₃ single crystals by the Czochralski method. ECS J Solid State Sci Technol, 6, Q3007(2017).

[30] M Higashiwaki, A Kuramata, H Murakami et al. State-of-the-art technologies of gallium oxide power devices. J Phys D, 50, 333002(2017).

[31] K Hoshikawa, E Ohba, E Kobayashi et al. Growth of β-Ga₂O₃ single crystals using vertical Bridgman method in ambient air. J Cryst Growth, 447, 36(2016).

[32] F Alema, B Hertog, A Osinsky et al. Fast growth rate of epitaxial β–Ga₂O₃ by close coupled showerhead MOCVD. J Cryst Growth, 475, 77(2017).

[33] D Gogova, G Wagner, M Baldini et al. Structural properties of Si-doped β-Ga₂O₃ layers grown by MOVPE. J Cryst Growth, 401, 665(2014).

[34] M Baldini, M Albrecht, A Fiedler et al. Semiconducting Sn-doped β-Ga₂O₃ homoepitaxial layers grown by metal organic vapour-phase epitaxy. J Mater Sci, 51, 3650(2016).

[35] K Sasaki, M Higashiwaki, A Kuramata et al. Growth temperature dependences of structural and electrical properties of Ga₂O₃ epitaxial films grown on β-Ga₂O₃ (010) substrates by molecular beam epitaxy. J Cryst Growth, 392, 30(2014).

[36] T Oshima, T Okuno, S Fujita. Ga₂O₃ thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors. Jpn J Appl Phys, 46, 7217(2007).

[37] H Okumura, M Kita, K Sasaki et al. Systematic investigation of the growth rate of β-Ga₂O₃(010) by plasma-assisted molecular beam epitaxy. Appl Phys Express, 7, 095501(2014).

[38] T Oshima, N Arai, N Suzuki et al. Surface morphology of homoepitaxial β-Ga₂O₃ thin films grown by molecular beam epitaxy. Thin Solid Films, 516, 5768(2008).

[39] Y Oshima, E G Vıllora, K Shimamura. Halide vapor phase epitaxy of twin-free α-Ga₂O₃ on sapphire (0001) substrates. Appl Phys Express, 8, 055501(2015).

[40] T Watahiki, Y Yuda, A Furukawa et al. Heterojunction p-Cu₂O/n-Ga₂O₃ diode with high breakdown voltage. Appl Phys Lett, 111, 222104(2017).

[41] H Murakami, K Nomura, K Goto et al. Homoepitaxial growth of β-Ga₂O₃ layers by halide vapor phase epitaxy. Appl Phys Express, 8, 015503(2015).

[42] K Nomura, K Goto, i R Togashi et al. Thermodynamic study of β-Ga₂O₃ growth by halide vapor phase epitaxy. J Cryst Growth, 405, 19(2014).

[43] C Hebert, A Petitmangin, J Perrie're et al. Phase separation in oxygen deficient gallium oxide films grown by pulsed-laser deposition. Mater Chem Phys, 133, 135(2012).

[44] Z Chen, X Wang, S Noda et al. Effects of dopant contents on structural, morphological and optical properties of Er doped Ga₂O₃ films. Superlattices Microstruct, 90, 207(2016).

[45] T Kawaharamura. Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow. Jpn J Appl Phys, 53, 05F(2014).

[46] S D Lee, K Kaneko, S Fujita. Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition. Jpn J Appl Phys, 55, 1202B(2016).

[47] G T Dang, T Kawaharamura, M Furuta et al. Metal–semiconductor field-effect transistors with In–Ga–Zn–O channel grown by nonvacuum-processed mist chemical vapor deposition. IEEE Electron Device Lett, 36, 463(2015).

[48] S Fujita, K Kaneko. Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films. J Cryst Growth, 401, 588(2014).

[49] K Akaiwa, S Fujita. Electrical conductive corundum-structured α-Ga₂O₃ thin films on sapphire with tin-doping grown by spray-assisted mist chemical vapor deposition. Jpn J Appl Phys, 51, 070203(2012).

[50] M Baldini, M Albrecht, D Gogova et al. Effect of indium as a surfactant in (Ga_1−xIn_x)₂O₃ epitaxial growth on β-Ga₂O₃ by metal organic vapour phase epitaxy. Semicond Sci Technol, 30, 024013(2015).

[51] Z Hu, H Zhou, Q Feng. Field-plated lateral β-Ga₂O₃ Schottky barrier diode with high reverse blocking voltage of more than 3 kV and high power figure-of-merit of 500 MW/cm². IEEE Electron Device Lett, 39, 1564(2018).

[52] K Sasaki, A Kuramata, T Masui et al. Device-quality beta-Ga₂O₃ epitaxial films fabricated by ozone molecular beam epitaxy. Appl Phys Exp, 5, 035502(2012).

[53] K Konishi, K Goto, H Murakami et al. 1-kV vertical β-Ga₂O₃ field-plated Schottky barrier diodes. Appl Phys Lett, 110, 103506(2017).

[54] J Yang, S Ahn, F Ren et al. High reverse breakdown voltage Schottky rectifiers without edge termination on β-Ga₂O₃. Appl Phys Lett, 110, 192101(2017).

[55] J Yang, S Ahn, F Ren et al. High breakdown voltage (−201) β-Ga₂O₃ Schottky rectifiers. IEEE Electron Device Lett, 38, 906(2017).

[56] J Yang, F Ren, S J Pearton et al. Vertical geometry 2-A forward current Ga₂O₃ Schottky rectifiers on bulk Ga₂O₃ substrates. IEEE Trans Electron Devices, 65, 2790(2018).

[57] M Higashiwaki, K Sasaki, A Kuramata et al. Gallium oxide (Ga₂O₃) metal−semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates. Appl Phys Lett, 100, 013504(2012).

[58] M H Wong, K Sasaki, A Kuramata et al. Field-plated Ga₂O₃ MOSFETs with a breakdown voltage of over 750 V. IEEE Electron Device Lett, 37, 212(2016).

[59] K Zeng, A Vaidya, U Singisetti et al. 1.85 kV breakdown voltage in lateral field-plated Ga₂O₃ MOSFETs. IEEE Electron Device Lett, 39, 1385(2018).

[60]

[61] Z Hu, K Nomoto, W Li et al. Enhancement-mode Ga₂O₃ vertical transistors with breakdown voltage >1 kV. IEEE Electron Device Lett, 39, 869(2018).

[62] A J Green, K D Chabak, M Baldini et al. β-Ga₂O₃ MOSFETs for radio frequency operation. IEEE Electron Device Lett, 38, 790(2017).

[63] M Singh, M A Casbon, M J Uren et al. Pulsed large signal rf performance of field-plated Ga₂O₃ MOSFETs. IEEE Electron Device Lett, 39, 1572(2018).

[64]

[65] W S Hwang, A Verma, H Peelaers et al. High-voltage field effect transistors with wide-bandgap beta-Ga₂O₃ nanomembranes. Appl Phys Lett, 104, 203111(2014).

[66] Z Hu, H Zhou, K Dang et al. lateral-Ga₂O₃ schottky barrier diode on sapphire substrate with reverse blocking voltage of 1.7 kV. IEEE J Electron Device Soc, 6, 815(2018).

[67] H Zhou, K Maize, G Qiu et al. β-Ga₂O₃ on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect. Appl Phys Lett, 111, 092102(2017).

[68] H Zhou, M Si, S Alghamdi et al. High performance depletion/ enhancement mode β-Ga₂O₃ on insulator (GOOI) field-effect transistors with record drain currents of 600/450 mA/mm. IEEE Electron Device Lett, 38, 103(2017).

[69] N A Moser, J P Mccandless, A Crespo et al. High pulsed density β-Ga₂O₃ MOSFETs verified by an analytical model corrected for interface charge. Appl Phys Lett, 110, 143505(2017).

[70] S H Shin, M A Wahab, A Masuduzzaman et al. Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs. IEEE Trans Electron Devices, 62, 3516(2014).

[71] H Zhou, K Maize, J Noh et al. Thermo-dynamic studies of β-Ga₂O₃ nano-membrane field-effect transistors on sapphire substrate. ACS Omega, 2, 7723(2017).

[72] J Noh, M Si, H Zhou et al. The impact of substrates on the performance of top-gate β-Ga₂O₃ field-effect transistors: record high drain current of 980 mA/mm on diamond. IEEE Device Research Conference, 1(2018).

[73] K Maize, A Zibari, W D French et al. Thermoreflectance CCD imaging of self-heating in power MOSFET arrays. IEEE Trans Electron Devices, 61, 3047(2014).

[74] M Si, L Yang, H Zhou et al. β-Ga₂O₃ Nanomembrane negative capacitance field-effect transistors with steep subthreshold slope for wide band gap logic applications. ACS Omega, 2, 7136(2017).