• Journal of Semiconductors
  • Vol. 43, Issue 3, 031401 (2022)
Zhiting Lin, Zhongzhen Tong, Jin Zhang, Fangming Wang, Tian Xu, Yue Zhao, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao, and Junning Chen
Author Affiliations
  • School of Integrated Circuits, Anhui University, Hefei 230601, China
  • show less
    DOI: 10.1088/1674-4926/43/3/031401 Cite this Article
    Zhiting Lin, Zhongzhen Tong, Jin Zhang, Fangming Wang, Tian Xu, Yue Zhao, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao, Junning Chen. A review on SRAM-based computing in-memory: Circuits, functions, and applications[J]. Journal of Semiconductors, 2022, 43(3): 031401 Copy Citation Text show less

    Abstract

    Artificial intelligence (AI) processes data-centric applications with minimal effort. However, it poses new challenges to system design in terms of computational speed and energy efficiency. The traditional von Neumann architecture cannot meet the requirements of heavily data-centric applications due to the separation of computation and storage. The emergence of computing in-memory (CIM) is significant in circumventing the von Neumann bottleneck. A commercialized memory architecture, static random-access memory (SRAM), is fast and robust, consumes less power, and is compatible with state-of-the-art technology. This study investigates the research progress of SRAM-based CIM technology in three levels: circuit, function, and application. It also outlines the problems, challenges, and prospects of SRAM-based CIM macros.
    $ \begin{gathered} \left| {{D - P}} \right| = {\rm{max}} (D - P,P - D) \\ \quad\qquad \qquad \quad = {\rm{max}} (D + \overline P + 1,P + \overline D + 1) \\ \qquad \qquad \Rightarrow {\rm{max}} (D + \overline P ,P + \overline D ), \\ \end{gathered} $ (1)

    View in Article

    Zhiting Lin, Zhongzhen Tong, Jin Zhang, Fangming Wang, Tian Xu, Yue Zhao, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao, Junning Chen. A review on SRAM-based computing in-memory: Circuits, functions, and applications[J]. Journal of Semiconductors, 2022, 43(3): 031401
    Download Citation