Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING; jun LI Jian; Jun DENG; Jun HAN; Hong-xing GAI; Guang-di SHENG

Journals >Chinese Journal of Quantum Electronics >Volume 23 >Issue 2 >Page 222 > Article

Chinese Journal of Quantum Electronics
Vol. 23, Issue 2, 222 (2006)

Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING^*, jun LI Jian, Jun DENG, Jun HAN, Hong-xing GAI, and Guang-di SHENG

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[in Chinese]

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XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222 Copy Citation Text

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References

[1] Madjid H,Metzger R A,et al. Stability of beryllium-doped compositionally graded and abrupt AlInAs/GaInAs heterojunction bipolat transistors [J].Appl. Phys. Lett.,1993,63(1): 93-95.

[2] Ren F,Fullowan T R,Lothian J,et al. Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors [J].Appl. Phys. Lett.,1991,59(27): 3613-3615.

[3] Malik R J,Nottenberg R N,Schubert E F,et al. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament [J].Appl. Phys. Lett.,1998,53(26): 2661-2663.

[4] Kobayashi N,Makimoto T,Horikoshi Y. Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy [J].Appl. Phys. Lett.,1987,50(20): 1435-1437.

[5] Kim Seong-ll,Kim Moosung,Min SukKi,et al. Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grow by low-pressure metalorganic chemical vapor deposition [J].Appl. Phys.,1993,74:6128.

XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222

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