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    Journals >Chinese Journal of Quantum Electronics >Volume 23 >Issue 2 >Page 222 > Article
    • Chinese Journal of Quantum Electronics
    • Vol. 23, Issue 2, 222 (2006)
    Carbon doped GaAs epitaxial layer grown by MOCVD
    Yan-hui XING*, jun LI Jian, Jun DENG, Jun HAN..., Hong-xing GAI and Guang-di SHENG|Show fewer author(s)
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    XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222 Copy Citation Text show less

    Abstract

    The GaAs epitaxial layers of various dopant concentration are grown with CCl4as the doping source by the EMCORE D125 MOCVD system. The C-doped GaAs optical properties are studied by PL,DC XRD. With C dopant concentration increase,band gap shrink,FWHM of PL increase,and lattice constant decrease.

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    XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222
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