Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING; jun LI Jian; Jun DENG; Jun HAN; Hong-xing GAI; Guang-di SHENG

Journals >Chinese Journal of Quantum Electronics >Volume 23 >Issue 2 >Page 222 > Article

Chinese Journal of Quantum Electronics
Vol. 23, Issue 2, 222 (2006)

Carbon doped GaAs epitaxial layer grown by MOCVD

Yan-hui XING^*, jun LI Jian, Jun DENG, Jun HAN, Hong-xing GAI, and Guang-di SHENG

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[in Chinese]

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DOI: Cite this Article

XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222 Copy Citation Text

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Abstract

The GaAs epitaxial layers of various dopant concentration are grown with CCl₄as the doping source by the EMCORE D125 MOCVD system. The C-doped GaAs optical properties are studied by PL,DC XRD. With C dopant concentration increase,band gap shrink,FWHM of PL increase,and lattice constant decrease.

Keywords

DC XRD GaAs doping optelectronics PL spectra

XING Yan-hui, LI Jian jun, DENG Jun, HAN Jun, GAI Hong-xing, SHENG Guang-di. Carbon doped GaAs epitaxial layer grown by MOCVD[J]. Chinese Journal of Quantum Electronics, 2006, 23(2): 222

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