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Journal of Semiconductors
Vol. 43, Issue 9, 092501 (2022)

Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS₂ homojunction

Jingzhi Fang^{1、2、3、4}, Huading Song³, Bo Li⁵, Ziqi Zhou^1、2、3, Juehan Yang^1、2, Benchuan Lin⁴, Zhimin Liao^3、*, and Zhongming Wei^1、2、**

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

⁴Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

⁵Hunan Key Laboratory of Two-Dimensional Materials, Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China

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DOI: 10.1088/1674-4926/43/9/092501 Cite this Article

Jingzhi Fang, Huading Song, Bo Li, Ziqi Zhou, Juehan Yang, Benchuan Lin, Zhimin Liao, Zhongming Wei. Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS₂ homojunction[J]. Journal of Semiconductors, 2022, 43(9): 092501 Copy Citation Text

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References

[1] C Gong, X Zhang. Two-dimensional magnetic crystals and emergent heterostructure devices. Science, 363, 706(2019).

[2] T Song, X Cai, M W Tu et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science, 360, 1214(2018).

[3] S Bhatti, R Sbiaa, A Hirohata et al. Spintronics based random access memory: a review. Mater Today, 20, 530(2017).

[4] Z Wang, I Gutierrez-Lezama, N Ubrig et al. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat Commun, 9, 2516(2018).

[5] S Ikeda, J Hayakawa, Y Ashizawa et al. Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature. Appl Phys Lett, 93, 082508(2008).

[6] S Ikeda, K Miura, H Yamamoto et al. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Nat Mater, 9, 721(2010).

[7] R Niu, W Zhu. Materials and possible mechanisms of extremely large magnetoresistance: a review. J Phys: Condens Matter, 34, 113001(2022).

[8] M Ali, J Xiong, S Flynn et al. Large, non-saturating magnetoresistance in WTe2. Nature, 514, 205(2014).

[9] T Dietl, H Ohno. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 86, 187(2014).

[10] T Dietl. A ten-year perspective on dilute magnetic semiconductors and oxides. Nat Mater, 9, 965(2010).

[11] A Ramasubramaniam, D Naveh. Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor. Phys Rev B, 87, 195201(2013).

[12] L Loh, Z Zhang, M Bosman et al. Substitutional doping in 2D transition metal dichalcogenides. Nano Res, 14, 1668(2021).

[13] A A Tedstone, D J Lewis, P O’Brien. Synthesis, properties, and applications of transition metal-doped layered transition metal dichalcogenides. Chem Mater, 28, 1965(2016).

[14] J Z Fang, Z Z Zhou, M Q Xiao et al. Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors. InfoMat, 2, 291(2019).

[15] M Hossain, B Qin, B Li et al. Synthesis, characterization, properties and applications of two-dimensional magnetic materials. Nano Today, 42, 101338(2022).

[16] V Kochat, A Apte, J A Hachtel et al. Re Doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv Mater, 29, 1703754(2017).

[17] B Li, T Xing, M Z Zhong et al. A two-dimensional Fe-doped SnS2 magnetic semiconductor. Nat Commun, 8, 1958(2017).

[18] H Bouzid, R Sahoo, S J Yun et al. Multiple magnetic phases in van der Waals Mn-doped SnS2 semiconductor. Adv Func Mater, 31, 2102560(2021).

[19] B Li. Huang L, Zhong M Z, et al. Synthesis and transport properties of large-scale alloy Co0.16Mo0.84S2 bilayer nanosheets. ACS Nano, 9, 1257(2015).

[20] J Zhou, J Lin, H Sims et al. Synthesis of Co-doped MoS2 monolayers with enhanced valley splitting. Adv Mater, 32, 1906536(2020).

[21] P M Coelho, H Komsa, K Lasek et al. Room-temperature ferromagnetism in MoTe2 by post-growth incorporation of vanadium impurities. Adv Elec Mater, 5, 1900044(2019).

[22] S Fu, K Kang, K Shayan et al. Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping. Nat Commun, 11, 2034(2020).

[23] Y T H Pham, M Liu, V O Jimenez et al. Tunable ferromagnetism and thermally induced spin flip in vanadium-doped tungsten diselenide monolayers at room temperature. Adv Mater, 32, 2003607(2020).

[24] L Yang, H Wu, W Zhang et al. Ta doping enhanced room-temperature ferromagnetism in 2D semiconducting MoTe2 nanosheets. Adv Electrin Mater, 5, 1900552(2019).

[25] S J Yun, D L Duong, D M Ha et al. Ferromagnetic order at room temperature in monolayer WSe2 semiconductor via vanadium dopant. Adv Sci, 7, 1903076(2020).

[26] F Zhang, B Zheng, A Sebastian et al. Monolayer vanadium-doped tungsten disulfide: A room-temperature dilute magnetic semiconductor. Adv Sci, 7, 2001174(2020).

[27] B Huang, G Clark, D Klein et al. Electrical control of 2D magnetism in bilayer CrI3. Nat Nanotech, 13, 544(2018).

[28] S Jiang, L Li, Z Wang et al. Controlling magnetism in 2D CrI3 by electrostatic doping. Nat Nanotech, 13, 549(2018).

[29] S Jiang, J Shan, K F Mak. Electric-field switching of two-dimensional van der Waals magnets. Nat Mater, 17, 406(2018).

[30] B Huang, G Clark, E Navarro-Moratalla et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature, 546, 270(2017).

[31] J U Lee, S Lee, J H Ryoo et al. Ising-type magnetic ordering in atomically thin FePS3. Nano Lett, 16, 7433(2016).

[32] C Gong, L Li, Z Li et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature, 546, 265(2017).

[33] W Xing, Y Chen, P M Odenthal et al. Electric field effect in multilayer Cr2Ge2Te6: a ferromagnetic 2D material. 2D Mater, 4, 2053(2017).

[34] Z Wang, T Zhang, M Ding et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nat Nanotech, 13, 554(2018).

[35] M Mogi, A Tsukazaki, Y Kaneko et al. Ferromagnetic insulator Cr2Ge2Te6 thin films with perpendicular remanence. APL Mater, 6, 091104(2018).

[36] Y J Deng, Y J Yu, Y C Song et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature, 563, 94(2018).

[37] Z Fei, B Huang, P Malinowski et al. Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat Mater, 17, 778(2018).

[38] M Bonilla, S Kolekar, Y Ma et al. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat Nanotech, 13, 289(2018).

[39] X Li, J T Lu, J Zhang et al. Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes. Nano Lett, 19, 5133(2019).

[40] G Miao, M Müller, J S Moodera et al. Magnetoresistance in double spin filter tunnel junctions with nonmagnetic electrodes and its unconventional bias dependence. Phys Rev Lett, 102, 076601(2009).

[41] H D Song, P F Zhu, J Z Fang et al. Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor. Phys Rev B, 103, 125304(2021).

[42] Y Chen, D Dumcenco, Y Zhu et al. Composition-dependent Raman modes of Mo1–xWxS2 monolayer alloys. Nanoscale, 6, 2833(2014).

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Jingzhi Fang, Huading Song, Bo Li, Ziqi Zhou, Juehan Yang, Benchuan Lin, Zhimin Liao, Zhongming Wei. Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS₂ homojunction[J]. Journal of Semiconductors, 2022, 43(9): 092501

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