[1] M M Waldrop. The chips are down for Moore's law. Nature, 530, 144(2016).
[2] S B Desai, S R Madhvapathy, A B Sachid et al. MoS2 transistors with 1-nanometer gate lengths. Science, 354, 99(2016).
[3] R Quhe, Q Li, Q Zhang et al. Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors. Phys Rev Appl, 10, 024022(2018).
[4] Y Wang, R Fei, R Quhe et al. Many-body effect and device performance limit of monolayer InSe. Acs Appl Mater Inter, 10, 23344(2018).
[5] Y Wang, P Huang, M Ye et al. Many-body effect, carrier mobility, and device performance of hexagonal arsenene and antimonene. Chem Mater, 29, 2191(2017).
[6] Z Ni, M Ye, J Ma et al. Performance upper limit of sub-10 nm monolayer MoS2 transistors. Adv Electron Mater, 2, 1600191(2016).
[7] Y Pan, Y Wang, L Wang et al. Graphdiyne-metal contacts and graphdiyne transistors. Nanoscale, 7, 2116(2015).
[8] H Li, J Tie, J Li et al. High-performance sub-10-nm monolayer black phosphorene tunneling transistors. Nano Res, 11, 2658(2018).
[9] R Quhe, J Liu, J Wu et al. High-performance sub-10 nm monolayer Bi2O2Se transistors. Nanoscale, 11, 532(2019).
[10] J Kang, W Liu, D Sarkar et al. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys Rev X, 4, 031005(2014).
[11] F Schwierz, J Pezoldt, R Granzner. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, 7, 8261(2015).
[12] Y Liu, N O Weiss, X Duan et al. Van der Waals heterostructures and devices. Nat Rev Mater, 1, 16042(2016).
[13] G Fiori, F Bonaccorso, G Iannaccone et al. Electronics based on two-dimensional materials. Nat Nanotechnol, 9, 1063(2014).
[14] D A Bandurin, A V Tyurnina, G L Yu et al. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat Nanotechnol, 12, 223(2017).
[15] Y Zhao, J Qiao, Z Yu et al. high-electron- mobility and air-stable 2D layered PtSe2 FETs. Adv Mater, 29, 1604230(2017).
[16] J Wu, H Yuan, M Meng et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat Nanotechnol, 12, 530(2017).
[17] X Huang, J Guan, Z Lin et al. Epitaxial growth and band structure of Te film on graphene. Nano Lett, 17, 4619(2017).
[18] J Chen, Y Dai, Y Ma et al. Ultrathin beta-tellurium layers grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Nanoscale, 9, 15945(2017).
[19] Y Wang, G Qiu, R Wang et al. Field-effect transistors made from solution-grown two-dimensional tellurene. Nat Electron, 1, 228(2018).
[20] Z Zhu, X Cai, S Yi et al. Multivalency-driven formation of Te-based monolayer materials: a combined first-principles and experimental study. Phys Rev Lett, 119, 106101(2017).
[21] A Coker, T Lee, T P Das. Investigation of the electronic properties of tellurium—energy-band structure. Phys Rev B, 22, 2968(1980).
[22] V B Anzin, M I Eremets, Y V Kosichkin et al. Measurement of energy-gap in tellurium under pressure. Phys Status Solidi A, 42, 385(1977).
[23] J Qiao, Y Pan, F Yang et al. Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties. Sci Bull, 63, 159(2018).
[24] W Bao, X Cai, D Kim et al. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl Phy Lett, 102, 042104(2013).
[25] D Jariwala, V K Sangwan, D J Late et al. Band-like transport in high mobility unencapsulated single-layer MoS2 transistors. Appl Phys Lett, 102, 699(2013).
[26] S Kim, A Konar, W S Hwang et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat Commun, 3(2012).
[27] S Larentis, B Fallahazad, E Tutuc. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl Phys Lett, 101, 193(2012).
[28] N R Pradhan, D Rhodes, Y Xin et al. Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities. Acs Nano, 8, 7923(2014).
[29] B Chamlagain, Q Li, N J Ghimire et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on Parylene-C substrate. Acs Nano, 8, 5079(2014).
[30] L Li, Y Yu, G J Ye et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 9, 372(2014).
[31] J Qiao, X Kong, Z X Hu et al. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat Commun, 5, 4475(2014).
[32] A Allain, J Kang, K Banerjee et al. Electrical contacts to two-dimensional semiconductors. Nat Mater, 14, 1195(2015).
[33] H Liu, Y Du, Y Deng et al. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem Soc Rev, 44, 2732(2015).
[34] R T Tung. The physics and chemistry of the Schottky barrier height. Appl Phys Rev, 1, 251(2014).
[35] S Liu, J Li, B Shi et al. Gate-tunable interfacial properties of in-plane ML MX2 1T '-2H heterojunctions. J Mater Chem C, 6, 7400(2018).
[36] J Yang, R Quhe, S Feng et al. Interfacial properties of borophene contacts with two-dimensional semiconductors. Phys Chem Chem Phys, 19, 23982(2017).
[37] J Yan, X Zhang, Y Pan et al. Monolayer tellurene-metal contacts. J Mater Chem C, 6, 6153(2018).
[38] Y Pan, i S Li, e M Ye et al. Interfacial properties of monolayer MoSe2–metal contacts. J Phys Chem C, 120, 13063(2016).
[39] Y Pan, S Li, M Ye et al. Interfacial properties of monolayer MoSe2-metal contacts. J Phys Chem C, 120, 13063(2016).
[40] G Kresse, J Hafner. Abintio molecular-dynamics for liquid-metals. Phys Rev B, 47, 558(1993).
[41] G Kresse, J Hafner. Ab-intio molecular-dynamics simulation of the liquid-metal amorphous-semiconductor transition on germanium. Phys Rev B, 49, 14251(1994).
[42] G Kresse, J Furthmuller. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comp Mater Sci, 6, 15(1996).
[43] G Kresse, J Furthmuller. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B, 54, 11169(1996).
[44] H J Monkhorst, J D Pack. Special points for Billouin-Zone integrations. Phys Rev B, 13, 5188(1976).
[45] S Grimme, J Antony, S Ehrlich et al. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J Chem Phys, 132, 154104(2010).
[46]
[47] M Brandbyge, J L Mozos, P Ordejon et al. Density-functional method for nonequilibrium electron transport. Phys Rev B, 65, 165401(2002).
[48] D R Smith, S Schultz, P Markos et al. Determination of effective permittivity and permeability of metamaterials from reflection and transmission coefficients. Phys Rev B, 65, 195104(2002).
[49] A H D Cheng, D T Cheng. Heritage and early history of the boundary element method. Eng Anal Bound Elem, 29, 268(2005).
[50] J P Perdew, K Burke, M Ernzerhof. Generalized gradient approximation made simple. Phys Rev Lett, 77, 3865(1996).
[51] Y Zhang, T R Chang, B Zhou et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat Nanotechnol, 9, 111(2014).
[52] Y Pan, Y Wang, M Ye et al. Monolayer phosphorene-metal contacts. Chem Mater, 28, 2100(2016).
[53] Y Pan, Y Dan, Y Wang et al. Schottky barriers in bilayer phosphorene transistors. Acs Appl Mater Inter, 9, 12694(2017).
[54] X Zhang, Y Pan, M Ye et al. Three-layer phosphorene-metal interfaces. Nano Res, 11, 707(2018).
[55] B Shi, Y Wang, J Li et al. n-type Ohmic contact and p-type Schottky contact of monolayer InSe transistors. Phys Chem Chem Phys, 20, 24641(2018).
[56] H Zhong, Q Ruge, Y Wang et al. Interfacial properties of ponolayer and bilayer MoS2 contacts with metals: beyond the energy band calculations. Sci Rep, 6, 21786(2016).
[57] W Hu, T Wang, J Yang. Tunable Schottky contacts in hybrid graphene-phosphorene nanocomposites. J Mater Chem C, 3, 4756(2015).
[58] Y Wang, M Ye, M Weng et al. Electrical contacts in monolayer arsenene devices. Acs Appl Mater Inter, 9, 29273(2017).
[59] C Kim, I Moon, D Lee et al. Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides. Acs Nano, 11, 1588(2017).
[60] S Liu, L Xu, Y Pan et al. Unusual Fermi level pinning and Ohmic contact at monolayer Bi2O2Se - metal interface. Submitted(2018).
[61] Y Liu, P Stradins, S H Wei. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. Sci Adv, 2, e1600069(2016).
[62] J E Padilha, A Fazzio, A J R da Silva. Van der Waals heterostructure of phosphorene and graphene: tuning the Schottky barrier and doping by electrostatic gating. Phys Rev Lett, 114, 066803(2015).
[63] A Avsar, I J Vera-Marun, J Y Tan et al. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. Acs Nano, 9, 4138(2015).
