Thermally enhanced responsivity in an all-silicon optical power monitor based on defect-mediated absorption

Qikai Huang; Hui Yu; Qiang Zhang; Yan Li; Weiwei Chen; Yuehai Wang; Jianyi Yang

doi:10.1364/PRJ.432731

Journals >Photonics Research >Volume 9 >Issue 11 >Page 2205 > Article

Photonics Research
Vol. 9, Issue 11, 2205 (2021)

Thermally enhanced responsivity in an all-silicon optical power monitor based on defect-mediated absorption

Qikai Huang¹, Hui Yu^1、2、*, Qiang Zhang¹, Yan Li³, Weiwei Chen³, Yuehai Wang¹, and Jianyi Yang¹

Author Affiliations

¹Institute of Integrated Microelectronic Systems, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

²Zhejiang Lab, Hangzhou 310027, China

³Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China

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DOI: 10.1364/PRJ.432731 Cite this Article Set citation alerts

Qikai Huang, Hui Yu, Qiang Zhang, Yan Li, Weiwei Chen, Yuehai Wang, Jianyi Yang. Thermally enhanced responsivity in an all-silicon optical power monitor based on defect-mediated absorption[J]. Photonics Research, 2021, 9(11): 2205 Copy Citation Text

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