• Photonics Research
  • Vol. 10, Issue 10, 2317 (2022)
Tongling Wang1,†, Tengteng Li2,†, Haiyun Yao3, Yuying Lu4..., Xin Yan3, Maoyong Cao1,6,*, Lanju Liang3,7,*, Maosheng Yang5,8,* and Jianquan Yao2|Show fewer author(s)
Author Affiliations
  • 1School of Information and Automation Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
  • 2State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China
  • 3School of Opto-electronic Engineering, Zaozhuang University, Zaozhuang 277160, China
  • 4Precision Optical Manufacturing and Testing Centre, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 5School of Electrical and Optoelectronic Engineering, West Anhui University, Lu’an 237000, China
  • 6e-mail: cmy@qlu.edu.cn
  • 7e-mail: lianglanju123@163.com
  • 8e-mail: 42000027@wxc.edu.cn
  • show less
    DOI: 10.1364/PRJ.461787 Cite this Article Set citation alerts
    Tongling Wang, Tengteng Li, Haiyun Yao, Yuying Lu, Xin Yan, Maoyong Cao, Lanju Liang, Maosheng Yang, Jianquan Yao, "High-sensitivity modulation of electromagnetically induced transparency analog in a THz asymmetric metasurface integrating perovskite and graphene," Photonics Res. 10, 2317 (2022) Copy Citation Text show less

    Abstract

    Active control of the electromagnetically induced transparency (EIT) analog is desirable in photonics development. Here, we theoretically and experimentally proposed a novel terahertz (THz) asymmetric metasurface structure that can possess high-sensitivity modulation under extremely low power density by integrating perovskite or graphene. Using the novel metasurface structure with the perovskite coating, the maximum amplitude modulation depth (AMD) of this perovskite-based device reached 490.53% at a low power density of 12.8037mW/cm2. In addition, after the novel THz metasurface structure was combined with graphene, this graphene-based device also achieved high AMD with the maximum AMD being 180.56% at 16.312mW/cm2, and its transmission amplitude could be electrically driven at a low bias voltage. The physical origin of this modulation was explained using a two-oscillator EIT model. This work provides a promising platform for developing high-sensitivity THz sensors, light modulators, and switches.
    σg(ω)=ie2EFπ2(ω+iτ1).

    View in Article

    x¨1+γ1x˙1+ω12x1+κ2x2=gE0ejωt,

    View in Article

    x¨2+γ2x˙2+ω22x2+κ2x1=0,

    View in Article

    χ(ω)=χr+jχiωω2+jγ12(ωω1+jγ12)(ωω2+jγ22)κ24,

    View in Article

    Tongling Wang, Tengteng Li, Haiyun Yao, Yuying Lu, Xin Yan, Maoyong Cao, Lanju Liang, Maosheng Yang, Jianquan Yao, "High-sensitivity modulation of electromagnetically induced transparency analog in a THz asymmetric metasurface integrating perovskite and graphene," Photonics Res. 10, 2317 (2022)
    Download Citation