Active control of the electromagnetically induced transparency (EIT) analog is desirable in photonics development. Here, we theoretically and experimentally proposed a novel terahertz (THz) asymmetric metasurface structure that can possess high-sensitivity modulation under extremely low power density by integrating perovskite or graphene. Using the novel metasurface structure with the perovskite coating, the maximum amplitude modulation depth (AMD) of this perovskite-based device reached 490.53% at a low power density of 12.8037mW/cm2. In addition, after the novel THz metasurface structure was combined with graphene, this graphene-based device also achieved high AMD with the maximum AMD being 180.56% at 16.312mW/cm2, and its transmission amplitude could be electrically driven at a low bias voltage. The physical origin of this modulation was explained using a two-oscillator EIT model. This work provides a promising platform for developing high-sensitivity THz sensors, light modulators, and switches.