Extraction of Material Parameters by Transmission Spectra of AlGaN Film

Binbin Sheng; Ling Wang; Jintong Xu; Xiangyang Li

doi:10.3788/AOS202141.0313001

[1] Amano H, Kito M, Hiramatsu K et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)[J]. Japanese Journal of Applied Physics, 28, L2112-L2114(1989).

[2] Li X Y, Xu J T, Tang Y W et al. GaN based ultraviolet detectors and its recent development[J]. Infrared and Laser Engineering, 35, 276-280(2006).

[3] Yang L C, Fu K, Shi X S et al. Technology and performance of metal-semiconductor-metal AlGaN/GaN heterostructure ultraviolet photodetector[J]. Acta Optica Sinica, 34, s104001(2014).

[4] Bao G H, Li D B, Sun X J et al. Enhanced spectral response of an AlGaN-based solar-blind ultraviolet photodetector with Al nanoparticles[J]. Optics Express, 22, 24286-24293(2014).

[5] Li D B, Jiang K, Sun X J et al. AlGaN photonics: recent advances in materials and ultraviolet devices[J]. Advances in Optics and Photonics, 10, 43-110(2018).

[6] Kalra A, Rathkanthiwar S, Muralidharan R et al. Material-to-device performance correlation for AlGaN-based solar-blind p-i-n photodiodes[J]. Semiconductor Science and Technology, 35, 035001(2020). http://www.researchgate.net/publication/337683837_Material-to-Device_Performance_Correlation_for_AlGaN-based_Solar-blind_p-i-n_Photodiodes

[7] Rajabi M, Dariani R S. Iraji zad A, et al. Optoelectronic properties of cauliflower like ZnO-ZnO nanorod/p-Si heterostructure[J]. Solid-State Electronics, 80, 33-37(2013).

[8] Zhuang Q H, Wang S Q. Monitoring method of optical film thickness[J]. Laser & Optoelectronics Progress, 55, 103102(2018).

[9] Jia H B, Sun J H, Xu Y et al. Determination of thickness and optical constants of sol-gel derived TiO2 films by combined analysis of transmittance and X-ray reflectivity spectra[J]. Acta Optica Sinica, 32, 0831001(2012).

[10] Liu Y, Li Q X, Wan L Y et al. Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry[J]. Applied Surface Science, 421, 389-396(2017). http://www.zhangqiaokeyan.com/academic-journal-foreign_other_thesis/0204111674090.html

[11] Brunner D, Angerer H, Bustarret E et al. Optical constants of epitaxial AlGaN films and their temperature dependence[J]. Journal of Applied Physics, 82, 5090-5096(1997). http://scitation.aip.org/content/aip/journal/jap/82/10/10.1063/1.366309

[12] Zhang J C, Hao Y, Li P X et al. Thickness measurement of GaN film based on transmission spectra[J]. Acta Physica Sinica, 53, 1243-1246(2004).

[13] Li C, Li X, Xu J T et al. Transmission spectra of GaN and AlGaN films[J]. Acta Photonica Sinica, 38, 2294-2298(2009).

[14] Li X, Wei Y F, Gong H M et al. Study on optical characteristics of wurtzite GaN[J]. Acta Photonica Sinica, 36, 304-307(2007).

[15] Katsidis C C, Siapkas D I. General transfer-matrix method for optical multilayer systems with coherent, partially coherent, and incoherent interference[J]. Applied Optics, 41, 3978-3987(2002). http://www.opticsinfobase.org/ao/abstract.cfm?id=69245

[16] Lin Y C, Lu W Q[M]. Principle of optical films(1990).

[17] Juárez-García B, González-Gutiérrez J. Rivera-Medina M J, et al. Requirements and applications of accurate modeling of the optical transmission of transparent conducting coatings[J]. Applied Optics, 58, 5179-5186(2019).

[18] Yin G, Merschjann C, Schmid M. The effect of surface roughness on the determination of optical constants of CuInSe2 and CuGaSe2 thin films[J]. Journal of Applied Physics, 113, 213510(2013). http://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6526656&sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number%3A6522967)%26pageNumber%3D2

[19] Yu G, Wang G. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge[J]. Applied Physics Letters, 70, 3209-3211(1997).

[20] Swanepoel R. Determination of the thickness and optical constants of amorphous silicon[J]. Journal of Physics E: Scientific Instruments, 16, 1214-1222(1983). http://adsabs.harvard.edu/abs/1983jphe...16.1214s

[21] Li C, Bao X C, Xu J T et al. Optical characterization of GaN/AlGaN bilayer by transmission and reflection spectra[J]. Journal of Applied Physics, 108, 063104(2010).

[22] Liu Z L, Wang W L, Yang W J et al. Influence of AlN buffer layer thickness on the properties of GaN films grown by pulsed laser deposition[J]. Semiconductor Optoelectronics, 35, 46-49(2014).

[23] Urbach F. The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids[J]. Physical Review, 92, 1324(1953). http://adsabs.harvard.edu/abs/1953PhRv...92.1324U

[24] Brown J D, Li J Z, Srinivasan P et al. Solar-blind AlGaN heterostructure photodiodes[J]. MRS Internet Journal of Nitride Semiconductor Research, 5, e9(2000). http://journals.cambridge.org/abstract_S1092578300000090

[25] Yun F, Reshchikov M A, He L et al. Energy band bowing parameter in AlxGa1-xN alloys[J]. Journal of Applied Physics, 92, 4837-4839(2002). http://ieeexplore.ieee.org/xpls/abs_all.jsp%3Farnumber%3D5034458

[26] Antoine-Vincent N, Natali F, Mihailovic M et al. Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates[J]. Journal of Applied Physics, 93, 5222-5226(2003).