Emitter layer optimization in heterojunction bifacial silicon solar cells

Adnan Shariah; Feda Mahasneh

doi:10.1088/1674-4926/43/12/122701

Journals >Journal of Semiconductors >Volume 43 >Issue 12 >Page 122701 > Article

Journal of Semiconductors
Vol. 43, Issue 12, 122701 (2022)

Emitter layer optimization in heterojunction bifacial silicon solar cells

Adnan Shariah^* and Feda Mahasneh^*

Author Affiliations

Department of Physics, Jordan University of Science and Technology, Irbid 22110, Jordan

show less

DOI: 10.1088/1674-4926/43/12/122701 Cite this Article

Adnan Shariah, Feda Mahasneh. Emitter layer optimization in heterojunction bifacial silicon solar cells[J]. Journal of Semiconductors, 2022, 43(12): 122701 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Fig. 1. (Color online) Structure of the proposed bifacial HIT solar cell.

Download full size | View in the Article

Fig. 2. (Color online) Density of states diagram of the emitter layer.

Download full size | View in the Article

Fig. 3. (Color online) Effect of doping concentration.

Download full size | View in the Article

Fig. 4. (Color online) Effect of gradient doping concentration.

Download full size | View in the Article

Fig. 5. (Color online) Variation of emitter thickness.

Download full size | View in the Article

Fig. 6. (Color online) Effect of electron affinity.

Download full size | View in the Article

Fig. 7. (Color online) Effect of emitter's band gap energy.

Download full size | View in the Article

Fig. 8. (Color online) Effect of hole's mobility.

Download full size | View in the Article

Fig. 9. (Color online) Effect of electron's mobility.

Download full size | View in the Article

Fig. 10. (Color online) Effect of operation temperature.

Download full size | View in the Article

Fig. 11. (Color online)J–V curves when the solar cell is illuminated from top side and/or rear side.

Download full size | View in the Article

Parameter/layer	(n⁺⁺) nc-Si:Hemitter	(i) a-Si:Hbuffer	(p⁺⁺) nc-Si:HBSF	(p) c-Siwafer
Layer thickness (nm)	(1–10) × 10^–7	2 × 10^–7	4	1.8 × 10⁵
Dielectric constant	11.9	11.9	11.9	11.9
Electron affinity (eV)	3.4–4.2	3.90	3.95	4.05
Band gap (eV )	1.4–2	1.74	1.3–2	1.12
Conduction band density (10²⁰cm^–³)	2.6	2.6	2.6	0.329
Valence band density (10²⁰cm^–³)	2.6	2.6	2.6	0.3104
Effective electron (hole) mobility (cm²/(V·s))	50 (20)	22 (2)	50 (20)	1009.4 (406.8)
Doping concentration acceptors (10¹⁷cm^–³)	0	0	5000	0.12
Doping concentration donators (10²⁰cm^–³)	5	0	0	0
Electron (hole) thermal velocity (10⁷cm/s)	1 (1 )	1 (1)	1 (1)	1 (1)
Layer density (g/cm³)	2.329	2.329	2.329	2.329
Auger electron (hole) recombination coefficient (10^–31cm⁶/s)	0 (0)	0 (0)	0 (0)	2.9 (0.99)
Band to band recombination coefficient (10^–15cm³/s)	0	0	0	9.5
Electron (hole) thermal cross section (10^–16cm²)	7 (7)	7 (7)	7 (7)
Total (specific) trap density (10²⁰cm^–³ )	1.36 (20)	0.64 (18)	16 (20)
Electron (hole) thermal cross section (10^–16cm²)	7 (7)	7 (7)	7 (7)
Total (specific) trap density (10²⁰cm^–³ )	1.88 (20)	0.94 (18.8)	2.4 (20)
Electron (hole) thermal cross section (10^–15cm²)	3 (30)	3 (30)	3 (30)
Total (specific) trap density (10¹⁷cm^–³)	690 (1300)	0.05 (0.138)	689 (1300)
Energy of distribution (characteristicE) (eV)	0.6 (0.21)	0.82 (0.144)	1.2 (0.21)
Electron (hole) thermal cross section (10^–14cm²)	3 (0.3)	3 (0.3)	3 (0.3)	1 (1)
Total (specific) trap density (10¹⁷cm^–³ )	689 (1300 )	0.05 (0.138)	689 (1300)	10^–⁸ (10^–⁸)
Energy of distribution (characteristicE) (eV)	0.7 (0.21)	0.92 (0.144)	1.1 (0.21)	0.56

Table 1. Simulation data used in AFORS.

Adnan Shariah, Feda Mahasneh. Emitter layer optimization in heterojunction bifacial silicon solar cells[J]. Journal of Semiconductors, 2022, 43(12): 122701

Download Citation

Save the article for my favorites

Paper Information