• Laser & Optoelectronics Progress
  • Vol. 58, Issue 1, 114004 (2021)
Zhao Hui, Wang Haoyu, Zhu Siqi*, Yin Hao, Li Zhen, and Chen Zhenqiang
Author Affiliations
  • Department of Optoelectronic Engineering, Institute of Science and Technology, Jinan University, Guangzhou, Guangdong 510632, China
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    DOI: 10.3788/LOP202158.0114004 Cite this Article Set citation alerts
    Zhao Hui, Wang Haoyu, Zhu Siqi, Yin Hao, Li Zhen, Chen Zhenqiang. 578.5 nm End-Pumped Passively Q-switched Raman Yellow Laser[J]. Laser & Optoelectronics Progress, 2021, 58(1): 114004 Copy Citation Text show less

    Abstract

    A laser diode end-pumped passively Q-switched Raman yellow laser based on Yb 3+∶YAG/Cr 4+∶YAG/YAG composite crystal is developed in this work. The passively Q-switched fundamental-frequency laser generated by the composite crystal passes through the Raman crystal YVO4 and the frequency-doubling crystal KTP, and finally obtains a laser output of 578.5 nm. A coupled cavity structure is used to reduce the loss of Raman light and frequency-doubled light, and an etalon is used to suppress dual-wavelength operation to improve the conversion efficiency of frequency-doubling. Experimental results show that when the pump power of the incident wavelength is 9.51 W, yellow light with a power of 183 mW, a wavelength of 578.5 nm, a pulse width of 6.537 ns, and a repetition frequency of 6.542 kHz can be detected.
    Zhao Hui, Wang Haoyu, Zhu Siqi, Yin Hao, Li Zhen, Chen Zhenqiang. 578.5 nm End-Pumped Passively Q-switched Raman Yellow Laser[J]. Laser & Optoelectronics Progress, 2021, 58(1): 114004
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