Su-Yu MA, Chuan-He MA, Xiao-Shuang LU, Guo-Shuai LI, Lin SUN, Ye CHEN, Fang-Yu YUE, Jun-Hao CHU. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4 [J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 92
- Journal of Infrared and Millimeter Waves
- Vol. 39, Issue 1, 92 (2020)
Fig. 1. CZTS薄膜（S1）X射线衍射谱，插图为EDX确定的样品中元素比例
![[in Chinese]](/richHtml/hwyhmb/2020/39/1/92/img_2.png)
Fig. 2. [in Chinese]
Fig. 3. S1器件在不同温度下的光电流谱，阴影部分（灰色）表示深缺陷相关的信号
Fig. 4. S1薄膜样品在不同激发功率下的光致发光谱（温度为4 K）
Fig. 5. 4 K温度下S1薄膜（a）发光峰峰位和（b）积分强度与激发功率的关系
Fig. 6. 20 mW激发功率下S1薄膜样品在不同温度下的光致发光谱
Fig. 7. 20 mW激发功率下S1薄膜样品发光峰积分强度与温度的依赖关系及拟合结果
Fig. 8. 铜锌锡硫半导体带边电子结构示意图
Fig. 9. （a）50 K下S2器件的光致发光谱（b）室温下S2器件的光电流谱及其一阶导数谱
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