[1] M Ravindiran, C Praveenkumar. Status review and the future prospects of CZTS based solar cell – A novel approach on the device structure and material modeling for CZTS based photovoltaic device. Renewable and Sustainable Energy Reviews, 94, 317-329(2018).
[2] M Kumar, A Dubey, N Adhikari. Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS-Se solar cells. Energy & Environmental Science, 8, 3134-3159(2015).
[3] W Wang, M T Winkler, O Gunawan. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency. Advanced Energy Materials, 4, 1301465(2014).
[4] Q J Guo, H W Hillhouse, R Agrawal. Synthesis of Cu2ZnSnS4 nanocrystal ink and its use for solar cells. Journal of the American Chemical Society, 131, 11672-11673(2009).
[5] W Shockley, H J Queisser. Detailed balance limit of efficiency of p-n junction solar cells. Journal of Applied Physics, 32, 510-519(1961).
[6] S Chen, A Walsh, X G Gong. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers. Advanced Materials, 25, 1522-1539(2013).
[7] G Rey, G Larramona, S Bourdais. On the origin of band-tails in kesterite. Solar Energy Materials and Solar Cells, 179, 142-151(2018).
[8] K S Lim, S M Yu, S Seo. Incorporation of Ge in Cu2ZnSnS4 thin film in a Zn-poor composition range. Materials Science in Semiconductor Processing, 89, 194-200(2019).
[9] K Tanaka, Y Miyamoto, H Uchiki. Donor-acceptor pair recombination luminescence from Cu2ZnSnS4 bulk single crystals. Physica Status Solidi a-Applications and Materials Science, 203, 2891-2896(2006).
[10] D P Halliday, R Claridge, M C J Goodman. Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model. Journal of Applied Physics, 113, 223503(2013).
[11] C Kim, S Hong. Band gap shift of Cu2ZnSnS4 thin film by residual stress. Journal of Alloys and Compounds, 799, 247-255(2019).
[12] J Tauc, R Grigorovici, A Vancu. Optical properties and electronic structure of amorphous germanium. Physica Status Solidi （b）, 15, 627-637(1966).
[13] P K Sarswat, M L Free. A study of energy band gap versus temperature for Cu2ZnSnS4 thin films. Physica B: Condensed Matter, 407, 108-111(2012).
[14] T Schmidt, K Lischka, W Zulehner. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Physical Review B, 45, 8989-8994(1992).
[15] I Dirnstorfer, M Wagner, D M Hofmann. Characterization of CuIn（Ga）Se2 thin films - II. In-rich layers. Physica Status Solidi a-Applied Research, 168, 163-175(1998).
[16] G Davies. The optical properties of luminescence centres in silicon. Physics Reports, 176, 83-188(1989).
[17] S Chen, L-W Wang, A Walsh. Abundance of CuZn + SnZn and 2CuZn + SnZn defect clusters in kesterite solar cells. Applied Physics Letters, 101, 223901(2012).
[18] S Chen, J-H Yang, X G Gong. Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4. Physical Review B, 81, 245204(2010).
[19] K G Lisunov, M Guk, A Nateprov. Features of the acceptor band and properties of localized carriers from studies of the variable-range hopping conduction in single crystals of p-Cu2ZnSnS4. Solar Energy Materials and Solar Cells, 112, 127-133(2013).
