A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

Moufu Kong; Zewei Hu; Ronghe Yan; Bo Yi; Bingke Zhang; Hongqiang Yang

doi:10.1088/1674-4926/44/5/052801

[1] A Oraon, S Shreya, R Kumari et al. A double trench 4H-SiC MOSFET as an enhanced model of SiC UMOSFET. 2017 7th International Symposium on Embedded Computing and System Design (ISED), 1(2018).

[2] H Y Yu, S W Liang, H Z Liu et al. Numerical study of SiC MOSFET with integrated n-/ n-type poly-Si/SiC heterojunction freewheeling diode. IEEE Trans Electron Devices, 68, 4571(2021).

[3] H Huang, Y Wang, C H Yu et al. A high-performance SiC super-junction MOSFET with a step-doping profile. IEEE J Electron Devices Soc, 9, 1084(2021).

[4] P Vudumula, S Kotamraju. Design and optimization of 1.2-kV SiC planar inversion MOSFET using split dummy gate concept for high-frequency applications. IEEE Trans Electron Devices, 66, 5266(2019).

[5] K Han, B J Baliga, W Sung. Split-gate 1.2-kV 4H-SiC MOSFET: Analysis and experimental validation. IEEE Electron Device Lett, 38, 1437(2017).

[6] M F Kong, Z W Hu, J C Gao et al. A 1200-V-class ultra-low specific on-resistance SiC lateral MOSFET with double trench gate and VLD technique. IEEE J Electron Devices Soc, 10, 83(2021).

[7] Y T Liu, D H Jin, S Q Jiang et al. An active damping control method for the LLCL filter-based SiC MOSFET grid-connected inverter in vehicle-to-grid application. IEEE Trans Veh Technol, 68, 3411(2019).

[8] H Kim, H Chen, D Maksimović et al. SiC-MOSFET composite boost converter with 22 kW/L power density for electric vehicle application. 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), 134(2017).

[9] A Anthon, Z Zhang, M A E Andersen et al. The benefits of SiC mosfets in a T-type inverter for grid-Tie applications. IEEE Trans Power Electron, 32, 2808(2016).

[10] T Masuda, Y Saito, T Kumazawa et al. 0.63 mΩcm2 /1170V 4H H-SiC super junction V-groove trench MOSFET. 2018 IEEE International Electron Devices Meeting (IEDM), 484(2018).

[11] M Baba, T Tawara, T Morimoto et al. Ultra-low specific on-resistance achieved in 3.3 kV-class SiC superjunction MOSFET. 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 83(2021).

[12] R Ghandi, A Bolotnikov, S Kennerly et al. 4.5kV SiC charge-balanced MOSFETs with ultra-low on-resistance. 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 126(2020).

[13] K Akshay, S Karmalkar. Quick design of a superjunction considering charge imbalance due to process variations. IEEE Trans Electron Devices, 67, 3024(2020).

[14] M Alam, D T Morisette, J A Cooper. Design guidelines for superjunction devices in the presence of charge imbalance. IEEE Trans Electron Devices, 65, 3345(2018).

[15] X B Chen, M M Huang. A vertical power MOSFET with an interdigitated drift region using high-k insulator. IEEE Trans Electron Devices, 59, 2430(2012).

[16] X J Lyu, X B Chen. Vertical power Hk-MOSFET of hexagonal layout. IEEE Trans Electron Devices, 60, 1709(2013).

[17] xiao rong Luo, jin yong Cai, Y Fan et al. Novel low-resistance current path UMOS with high-K dielectric Pillars. IEEE Trans Electron Devices, 60, 2840(2013).

[18] A Naugarhiya, P N Kondekar. High permittivity material selection for design of optimum Hk VDMOS. Superlattices Microstruct, 83, 310(2015).

[19] Z C He, M H Cao, N N Wang et al. Electron-pinned defect-dipoles for SrTiO3-based ceramics with high permittivity and low dielectric loss. 2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM), 1(2016).

[20] Z B Xia, H Chandrasekar, W Moore et al. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field. Appl Phys Lett, 115, 252104(2019).

[21] J H Li, P Li, W R Huo et al. Analysis and fabrication of an LDMOS with high-permittivity dielectric. IEEE Electron Device Lett, 32, 1266(2011).

[22] H Yang, S D Hu, S L Ran et al. Simulative researching of a 1200V SiC trench MOSFET with an enhanced vertical RESURF effect. IEEE J Electron Devices Soc, 8, 1335(2020).

[23] H Kitai, T Yamaguchi, Y Hozumi et al. A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications. Jpn J Appl Phys, 58, SBBD16(2019).

[24] Y L Zheng, W M Tang, T Chau et al. Simulation study of 4H-SiC high-k pillar MOSFET with integrated Schottky barrier diode. IEEE J Electron Devices Soc, 9, 951(2021).

[25] H Y Wang, C Wang, B Z Wang et al. 4H-SiC super-junction JFET: Design and experimental demonstration. IEEE Electron Device Lett, 41, 445(2020).

[26] H Yano, H Nakao, H Mikami et al. Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates. Appl Phys Lett, 90, 042102(2007).

[27] M M Huang, X B Chen. A superjunction structure using high-kinsulator for power devices: Theory and optimization. J Semicond, 37, 064014(2016).

[28] Y Zhao, M Toyama, K Kita et al. Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. Appl Phys Lett, 88, 072904(2006).

[29] J P Locquet, C Marchiori, M Sousa et al. High-K dielectrics for the gate stack. J Appl Phys, 100, 051610(2006).

[30] L F Ji, Y J Jiang. Dielectric and microstructure modification of Ta2O5 ceramics by laser sintering. Mater Lett, 60, 86(2006).

[31] J H Moon, D I Eom, S Y No et al. Electrical properties of the La2O3/4H-SiC interface prepared by atomic layer deposition using La(iPrCp)3 and H2O. Mater Sci Forum, 527–529, 1083(2006).

[32] L H Huang, Y Liu, X Peng et al. Static performance and threshold voltage stability improvement of Al2O3/LaAlO3/SiO2 gate-stack for SiC power MOSFETs. IEEE Trans Electron Devices, 69, 690(2022).

[33] J Yu, G Chen, C X Li et al. Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates. Sens Actuat A Phys, 172, 9(2011).

[34] K B Jinesh, J H Klootwijk, Y Lamy et al. Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals. Appl Phys Lett, 93, 172904(2008).

[35] S K Kang, H Ishiwara. Characteristics of LaAlO3 as insulating buffer layers of ferroelectric-gate field effect transistors. Jpn J Appl Phys, 41, 6899(2002).

[36] C H Kao, P L Lai, H Y Wang. The comparison between Ta2O5 and Ti-doped Ta2O5 dielectrics. Surf Coat Technol, 231, 512(2013).

[37] A K Agarwal, S Seshadri, L B Rowland. Temperature dependence of Fowler-Nordheim Current in 6H- and 4H-SiC MOS capacitors. IEEE Electron Device Lett, 18, 592(1997).

[38] Q Y He, X R Luo, T Liao et al. 4H-SiC superjunction trench MOSFET with reduced saturation current. Superlattices Microstruct, 125, 58(2019).

[39] Z G Wang, X Wang, J B Kuo. Modeling power vertical high-k MOS device with interface charges via superposition methodology-breakdown voltage and specific ON-resistance. IEEE Trans Electron Devices, 65, 4947(2018).

[40] M Noborio, S D Jun, T Kimoto. P-channel MOSFETs on 4H-SiC {0001} and nonbasal faces fabricated by oxide deposition and N2O annealing. IEEE Trans Electron Devices, 56, 1953(2009).

[41] A Pérez-Tomás, P Brosselard, J Hassan et al. Schottky versus bipolar 3.3 kV SiC diodes. Semicond Sci Technol, 23, 125004(2008).

[42] E Schilirò, Nigro R Lo, P Fiorenza et al. Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC. AIP Adv, 6, 075021(2016).

[43] S Y Han, K H Kim, J K Kim et al. Ohmic contact formation mechanism of Ni on n-type 4H-SiC. Appl Phys Lett, 79, 1816(2001).

[44] M Hatano, S Moon, M H Lee et al. In situ andex situ diagnostics on melting and resolidification dynamics of amorphous and polycrystalline silicon thin films during excimer laser annealing. J Non Cryst Solids, 266–269, 654(2000).

[45] B Pécz. Contact formation in SiC devices. Appl Surf Sci, 184, 287(2001).

微信扫一扫：分享

微信扫一扫：分享