Pinning energies of organic semiconductors in high-efficiency organic solar cells

Xian’e Li; Qilun Zhang; Xianjie Liu; Mats Fahlman

doi:10.1088/1674-4926/44/3/032201

Journals >Journal of Semiconductors >Volume 44 >Issue 3 >Page 032201 > Article

Journal of Semiconductors
Vol. 44, Issue 3, 032201 (2023)

Pinning energies of organic semiconductors in high-efficiency organic solar cells

Xian’e Li^1、*, Qilun Zhang^1、2, Xianjie Liu¹, and Mats Fahlman^1、2

Author Affiliations

¹Laboratory of Organic Electronics, Department of Science and Technology (ITN), Linköping University, SE-60174, Norrköping, Sweden

²Wallenberg Wood Science Center, Department of Science and Technology (ITN), Linköping University, SE-60174, Norrköping, Sweden

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DOI: 10.1088/1674-4926/44/3/032201 Cite this Article

Xian’e Li, Qilun Zhang, Xianjie Liu, Mats Fahlman. Pinning energies of organic semiconductors in high-efficiency organic solar cells[J]. Journal of Semiconductors, 2023, 44(3): 032201 Copy Citation Text

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(Color online) (a) Schematic of the common interface phenomenon at organic/metal or organic/organic interfaces. (b) Schematic illustration of the integer charge transfer (ICT) model.

Fig. 1. (Color online) (a) Schematic of the common interface phenomenon at organic/metal or organic/organic interfaces. (b) Schematic illustration of the integer charge transfer (ICT) model.

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(Color online) (a) Schematic illustration of deriving important parameters from UPS characterization. (b) UPS spectra of Y11 spin-coated on different substrates. The spectra of negative pinning region, vacuum level alignment region and positive pinning region are denoted in red, yellow, and blue, respectively.

Fig. 2. (Color online) (a) Schematic illustration of deriving important parameters from UPS characterization. (b) UPS spectra of Y11 spin-coated on different substrates. The spectra of negative pinning region, vacuum level alignment region and positive pinning region are denoted in red, yellow, and blue, respectively.

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Fig. 3. (Color online) Dependence of the work function of (a) donor and (b) NFA coated substrates (Φ_org_/sub) on the work function of bare substrate (Φ_sub). Data points of PM6, PBDB-T, ITIC, and IT4F are abstracted from Ref. [29].

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Fig. 4. (Color online) Schematic illustration of energy levels of donor and acceptor before and after contact. Δ_HOMO (Δ′_HOMO), Δ_LUMO (Δ′_LUMO), Γ(Γ′) present the HOMO difference, LUMO difference, and interfacial state energy gap before (after) the donor (D) and acceptor (A) contact. Δ is the interface dipole inducing the vacuum level (VL) shift.

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	Materials	E_ICT+ (eV)	E_ICT− (eV)	IP (eV)	EA (eV)
^aValues from Ref. [15];^bValues from Ref. [29];^cValues from Ref. [21].
	Donors
	PBDB-T	4.34^b	–	4.88^b	2.88^a
	PM6	4.50^b	–	5.06^b	3.05^a
	PFO	5.07^b	–	5.81^b	–
	TQ1	4.29^b	–	4.80^b	–
	P3HT	4.14^b	–	4.54^b	2.17^a
	D18	4.60^b	–	5.20^b	2.86^a
	DR3	4.30	–	4.94	3.3^a
	ZR1	4.40	–	5.02	3.37^a
	PTB7-Th	4.54	–	5.06	3.4^a
	MDMO-PPV	4.28	–	4.79	–
	Meh-PPV	4.37	–	4.99	–
	DRTB-T-C4	4.60	–	5.01	–
	PTO2	4.60	–	5.40	3.25^a
	PM7	4.54	–	5.22	3.27^a
	Acceptors
	IEICO	4.74	4.24^b	5.24^b	3.75^a
	IEICO-4F	4.83	4.33^b	5.40^b	3.9^a
	Y1	4.78	4.28	5.45	3.68^a
	Y11	5.10	4.50^b	5.50^b	--
	Y6	4.90	4.46^b	5.58^b	4.07^a
	N2200	4.74	4.16	5.66	--
	ITIC	4.79^b	4.42^b	5.74^b	3.9^a
	IT4F	5.02^b	4.55^b	5.79^b	4.1^a
	O-IDTBR	4.76	4.16	5.48	3.6^a
	SF(DPPB)₄	4.60	–	5.37	–
	PC₇₀BM	5.08	4.40^b	5.78^b	–
	IC₆₀BA	5.15^c	4.05^c	5.93^c	–
	C₆₀	5.55^c	4.57^c	6.35^c	–
	C₇₀	5.48^c	4.65^c	6.30^c	–

Table 1. Summary of the pinning energies (E_ICT_+,–), ionization potentials (IP), and electron affinities (EA) of donors and acceptors.

Xian’e Li, Qilun Zhang, Xianjie Liu, Mats Fahlman. Pinning energies of organic semiconductors in high-efficiency organic solar cells[J]. Journal of Semiconductors, 2023, 44(3): 032201

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