Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401
- Chinese Optics Letters
- Vol. 16, Issue 6, 060401 (2018)
Fig. 1. Structure of our fabricated 4H-SiC APDs. (a) Schematic cross-section of the 4H-SiC APDs; (b) profile of the beveled mesa, where the top-view image of one fabricated 4H-SiC APD with 600 μm diameter is shown in the inset.
Fig. 2. Dark current of fabricated large-area 4H-SiC APDs. (a) Comparison of dark current with and without passivation; (b) dark current of fabricated APDs with various sizes.
Fig. 3. I –V measurements of the fabricated 4H-SiC APD with 600 μm diameter, where the multiplication gain is calculated.
Fig. 4. Spectral response characteristics and external quantum efficiency of fabricated 4H-SiC APD with 600 μm diameter.
Fig. 5. Performance of the fabricated large-area 4H-SiC APD compared with the previously reported devices. (a) Comparison of multiplication gain; (b) comparison of dark current at the gain of 1000.
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20