Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Xingye Zhou; Jia Li; Weili Lu; Yuangang Wang; Xubo Song; Shunzheng Yin; Xin Tan; Yuanjie Lü; Hongyu Guo; Guodong Gu; Zhihong Feng

doi:10.3788/COL201816.060401

Journals >Chinese Optics Letters >Volume 16 >Issue 6 >Page 060401 > Article

Chinese Optics Letters
Vol. 16, Issue 6, 060401 (2018)

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü^*, Hongyu Guo, Guodong Gu, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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DOI: 10.3788/COL201816.060401 Cite this Article Set citation alerts

Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401 Copy Citation Text

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