Researching | Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

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Chinese Optics Letters
Vol. 16, Issue 6, 060401 (2018)

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü^*, Hongyu Guo, Guodong Gu, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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DOI: 10.3788/COL201816.060401 Cite this Article Set citation alerts

Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401 Copy Citation Text

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[3] Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area[J]. Chinese Optics Letters, 2019, 17(9): 090401

Data from CrossRef

[1] Xiaolong Cai, Dong Zhou, Liang Cheng, Fangfang Ren, Hong Zhong, Rong Zhang, Youdou Zheng, Hai Lu. Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses. Chinese Physics B, 28, 098503(2019).

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Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401

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