[1] J. C. Norman, D. Jung, Z. Zhang, Y. Wan, S. Liu, C. Shang, R. W. Herrick, W. W. Chow, A. C. Gossard, J. E. Bowers. A review of high-performance quantum dot lasers on silicon. IEEE J. Quantum Electron., 55, 2000511(2019).

[2] K. Nishi, K. Takemasa, M. Sugawara, Y. Arakawa. Development of quantum dot lasers for data-com and silicon photonics applications. IEEE J. Sel. Top. Quantum Electron., 23, 1901007(2017).

[3] C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, A. J. Ou, J. C. Leu, Y.-H. Chen, K. Asanovic, R. J. Ram, M. A. Popovic, V. M. Stojanovic. Single-chip microprocessor that communicates directly using light. Nature, 528, 534-538(2015).

[4] K. Mizutani, K. Yashiki, M. Kurihara, Y. Suzuki, Y. Hagihara, N. Hatori, T. Shimizu, Y. Urino, T. Nakamura, K. Kurata, Y. Arakawa. Isolator free optical I/O core transmitter by using quantum dot laser. 2015 IEEE 12th International Conference on Group IV Photonics (GFP), 177-178(2015).

[5] L. Bi, J. Hu, P. Jiang, D. H. Kim, G. F. Dionne, L. C. Kimerling, C. Ross. On-chip optical isolation in monolithically integrated non-reciprocal optical resonators. Nat. Photonics, 5, 758-762(2011).

[6] T. L. Koch, R. Linke. Effect of nonlinear gain reduction on semiconductor laser wavelength chirping. Appl. Phys. Lett., 48, 613-615(1986).

[7] T. L. Koch, J. E. Bowers. Nature of wavelength chirping in directly modulated semiconductor lasers. Electron. Lett., 20, 1038-1040(1984).

[8] A. Becker, V. Sichkovskyi, M. Bjelica, A. Rippien, F. Schnabel, M. Kaiser, O. Eyal, B. Witzigmann, G. Eisenstein, J. Reithmaier. Widely tunable narrow-linewidth 1.5  μm light source based on a monolithically integrated quantum dot laser array. Appl. Phys. Lett., 110, 181103(2017).

[9] H. Su, H. Li, L. Zhang, Z. Zou, A. Gray, R. Wang, P. Varangis, L. Lester. Nondegenerate four-wave mixing in quantum dot distributed feedback lasers. IEEE Photon. Technol. Lett., 17, 1686-1688(2005).

[10] S. Wieczorek, B. Krauskopf, T. B. Simpson, D. Lenstra. The dynamical complexity of optically injected semiconductor lasers. Phys. Rep., 416, 1-128(2005).

[11] C. Otto, B. Globisch, K. Lüdge, E. Schöll, T. Erneux. Complex dynamics of semiconductor quantum dot lasers subject to delayed optical feedback. Internat. J. Bifur. Chaos, 22, 1250246(2012).

[12] D. O’Brien, S. Hegarty, G. Huyet, J. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. Ustinov, A. Zhukov, S. Mikhrin, A. Kovsh. Feedback sensitivity of 1.3  μm InAs/GaAs quantum dot lasers. Electron. Lett., 39, 1819-1820(2003).

[13] B. Lingnau, W. W. Chow, E. Schöll, K. Lüdge. Feedback and injection locking instabilities in quantum-dot lasers: a microscopically based bifurcation analysis. New J. Phys., 15, 093031(2013).

[14] S. Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S. N. Elliott, A. Sobiesierski, A. J. Seeds, I. Ross, P. M. Smowton, H. Liu. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat. Photonics, 10, 307-311(2016).

[15] J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor. Appl. Phys. Lett., 112, 251111(2018).

[16] C. Wang, K. Schires, M. Osiński, P. J. Poole, F. Grillot. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking. Sci. Rep., 6, 27825(2016).

[17] M. Osinski, J. Buus. Linewidth broadening factor in semiconductor lasers: an overview. IEEE J. Quantum Electron., 23, 9-29(1987).

[18] C. Hantschmann, P. P. Vasil’ev, A. Wonfor, S. Chen, M. Liao, A. J. Seeds, H. Liu, R. V. Penty, I. H. White. Understanding the bandwidth limitations in monolithic 1.3  μm InAs/GaAs quantum dot lasers on silicon. J. Lightwave Technol., 37, 949-955(2019).

[19] M. Liao, S. Chen, Z. Liu, Y. Wang, L. Ponnampalam, Z. Zhou, J. Wu, M. Tang, S. Shutts, Z. Liu, P. M. Smowton, S. Yu, A. Seeds, H. Liu. Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photon. Res., 6, 1062-1066(2018).

[20] D. Jung, J. Norman, M. J. Kennedy, C. Shang, B. Shin, Y. Wan, A. C. Gossard, J. E. Bowers. High efficiency low threshold current 1.3  μm InAs quantum dot lasers on on-axis (001) GaP/Si. Appl. Phys. Lett., 111, 122107(2017).

[21] H. Huang, J. Duan, D. Jung, A. Y. Liu, Z. Zhang, J. Norman, J. E. Bowers, F. Grillot. Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon. J. Opt. Soc. Am. B, 35, 2780-2787(2018).

[22] A. Y. Liu, T. Komljenovic, M. L. Davenport, A. C. Gossard, J. E. Bowers. Reflection sensitivity of 1.3  μm quantum dot lasers epitaxially grown on silicon. Opt. Express, 25, 9535-9543(2017).

[23] L. A. Coldren, S. W. Corzine, M. L. Mashanovitch. Diode Lasers and Photonic Integrated Circuits(2012).

[24] F. Grillot, B. Dagens, J.-G. Provost, H. Su, L. F. Lester. Gain compression and above-threshold linewidth enhancement factor in 1.3-μm InAs-GaAs quantum-dot lasers. IEEE J. Quantum Electron., 44, 946-951(2008).

[25] H. Su, L. F. Lester. Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp. J. Phys. D, 38, 2112-2118(2005).

[26] F. Grillot, N. Naderi, J. Wright, R. Raghunathan, M. Crowley, L. Lester. A dual-mode quantum dot laser operating in the excited state. Appl. Phys. Lett., 99, 231110(2011).

[27] Z. Zhang, D. Jung, J. C. Norman, P. Patel, W. W. Chow, J. E. Bowers. Effects of modulation p doping in InAs quantum dot lasers on silicon. Appl. Phys. Lett., 113, 061105(2018).

[28] J. Duan, H. Huang, B. Dong, D. Jung, J. C. Norman, J. E. Bowers, F. Grillot. 1.3-μm reflection insensitive InAs/GaAs quantum dot lasers directly grown on silicon. IEEE Photon. Technol. Lett., 31, 345-348(2019).