Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration

Jianan Duan; Heming Huang; Bozhang Dong; Justin C. Norman; Zeyu Zhang; John E. Bowers; Frédéric Grillot

doi:10.1364/PRJ.7.001222

Journals >Photonics Research >Volume 7 >Issue 11 >Page 1222 > Article

Photonics Research
Vol. 7, Issue 11, 1222 (2019)

Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration

Jianan Duan¹, Heming Huang¹, Bozhang Dong¹, Justin C. Norman², Zeyu Zhang³, John E. Bowers^2、3、4, and Frédéric Grillot^1、5、*

Author Affiliations

¹LTCI, Télécom Paris, Institut Polytechnique de Paris, 46 rue Barrault, 75013 Paris, France

²Materials Department, University of California, Santa Barbara, California 93106, USA

³Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

⁴Institute for Energy Efficiency, University of California, Santa Barbara, California 93106, USA

⁵Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106, USA

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DOI: 10.1364/PRJ.7.001222 Cite this Article Set citation alerts

Jianan Duan, Heming Huang, Bozhang Dong, Justin C. Norman, Zeyu Zhang, John E. Bowers, Frédéric Grillot. Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration[J]. Photonics Research, 2019, 7(11): 1222 Copy Citation Text

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