• Journal of Inorganic Materials
  • Vol. 34, Issue 8, 862 (2019)
Yi-Tian CHENG1、2, Wan-Qi QIU1、*, Ke-Song ZHOU1、2, Zhong-Wu LIU1, Dong-Ling JIAO1, Xi-Chun ZHONG1, and Hui ZHANG1
Author Affiliations
  • 1School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
  • 2The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China
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    DOI: 10.15541/jim20180473 Cite this Article
    Yi-Tian CHENG, Wan-Qi QIU, Ke-Song ZHOU, Zhong-Wu LIU, Dong-Ling JIAO, Xi-Chun ZHONG, Hui ZHANG. Low-temperature Deposition of α-Al2O3 Films by Reactive Sputtering Al+α-Al2O3 Target[J]. Journal of Inorganic Materials, 2019, 34(8): 862 Copy Citation Text show less
    Schematic diagram of the experimental setup of Radio Frequency (RF) magnetron sputtering system
    1. Schematic diagram of the experimental setup of Radio Frequency (RF) magnetron sputtering system
    GIXRD patterns of the films deposited at 550 ℃ from Al target and α-Al2O3 target
    2. GIXRD patterns of the films deposited at 550 ℃ from Al target and α-Al2O3 target
    GIXRD patterns of the film deposited at 550 ℃ from α-Al2O3 target and Al+α-Al2O3 composite target
    3. GIXRD patterns of the film deposited at 550 ℃ from α-Al2O3 target and Al+α-Al2O3 composite target
    GIXRD pattern of the film deposited from Al+α-Al2O3 composite target at 500 ℃
    4. GIXRD pattern of the film deposited from Al+α-Al2O3 composite target at 500 ℃
    TEM micrographs of the films deposited at 500 ℃from (a) α-Al2O3 and (b) Al+α-Al2O3 composite targets
    5. TEM micrographs of the films deposited at 500 ℃from (a) α-Al2O3 and (b) Al+α-Al2O3 composite targets
    (a) P-h curves and (b) Hardness of the alumina films deposited from different targets at 550 ℃
    6. (a) P-h curves and (b) Hardness of the alumina films deposited from different targets at 550 ℃
    TargetCompositions of the films/at%
    AlOO/Al
    Al39.1460.861.56
    α-Al2O340.5759.431.47
    Al+α-Al2O338.2661.741.61
    Table 1. The elementary compositions of the films deposited at 550 ℃ from various targets
    Yi-Tian CHENG, Wan-Qi QIU, Ke-Song ZHOU, Zhong-Wu LIU, Dong-Ling JIAO, Xi-Chun ZHONG, Hui ZHANG. Low-temperature Deposition of α-Al2O3 Films by Reactive Sputtering Al+α-Al2O3 Target[J]. Journal of Inorganic Materials, 2019, 34(8): 862
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