Bao-Jian LIU, Wei-Bo DUAN, Da-Qi LI, De-Ming YU, Gang CHEN, Ding-Quan LIU. The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 1
- Journal of Infrared and Millimeter Waves
- Vol. 39, Issue 1, 1 (2020)
Fig. 1. XRD patterns of silicon films annealed at different temperatures.
Fig. 2. （a） Raman spectra of the as-deposited and annealed silicon films; （b） The Gauss-deconvolution of Raman spectrum for silicon film annealed at 400 °C.
Fig. 3. Derivative ESR spectra of the as-deposited and annealed silicon films
Fig. 4. Optical transmittance spectra of as-deposited silicon film and the silicon films annealed at different temperatures.
Fig. 5. Variation of film optical thickness and physical thickness with annealing temperatures.
Fig. 6. Dispersion of （a） refractive index,（b） extinction coefficient of the as-deposited and annealed silicon films
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Table 1. Raman characteristic parameters of the as-deposited and annealed silicon films
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Table 2. Dispersion model parameters of the as-deposited and annealed silicon films
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